Voltage-tunable duial-band In(Ga)As quantum-ring infrared photodetector

被引：12
|
作者：
Dai, Jong-Horng
Lin, Y-I-Hing
Lee, Si-Chen [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2007年 / 19卷 / 17-20期
关键词：
dual bands infrared photodetector; quantum dots (QDs); quantum ring;
D O I：
10.1109/LPT.2007.903344
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ten-period In(Ga)As quantum-ring infrared photodetector (QRIP) prepared by molecular beam epitaxy is investigated. The quantum rings show narrow-sized distributions that are segregated into two groups. The QRIP demonstrates a dual-band operation with response peak shifting from the long wavelength of 9.5 mu m at biases less than 0.6 V to the middle wavelength of 6.8 mu m at biases larger than 0.8 V. The maximum peak responsivity at 20 K is 422 mA/W at 1.2-V bias.
引用
收藏
页码：1511 / 1513
页数：3
相关论文
共 50 条
  • [31] Two-color quantum-well infrared photodetector with voltage tunable peaks
    Majumdar, A
    Choi, KK
    Reno, JL
    Rokhinson, LP
    Tsui, DC
    APPLIED PHYSICS LETTERS, 2002, 80 (05) : 707 - 709
  • [32] Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector
    Ma, W. Q.
    Yang, X. J.
    Chong, M.
    Yang, T.
    Chen, L. H.
    Shao, J.
    Lue, X.
    Lu, W.
    Song, C. Y.
    Uo, H. C.
    APPLIED PHYSICS LETTERS, 2008, 93 (01)
  • [33] Towards a voltage tunable two-color quantum-well infrared photodetector
    Majumdar, A
    Choi, KK
    Rokhinson, LP
    Tsui, DC
    APPLIED PHYSICS LETTERS, 2002, 80 (04) : 538 - 540
  • [34] Tunable long-wavelength broad band asymmetric quantum well infrared photodetector
    Hostut, M.
    Kartal, D.
    Ergun, Y.
    Sokmen, I.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (04) : 422 - 426
  • [35] Asymmetrically Doped GaAs/AlGaAs Double-Quantum-Well Structure for Voltage-Tunable Infrared Detection
    Choi, Jae Kyu
    Vagidov, Nizami
    Sergeev, Andrei
    Kalchmair, Stefan
    Strasser, Gottfried
    Vasko, Fedir
    Mitin, Vladimir
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (07)
  • [36] Voltage-tunable PtSi/SiGe/Si Schottky diode infrared detectors
    Jimenez, JR
    SILICIDE THIN FILMS - FABRICATION, PROPERTIES, AND APPLICATIONS, 1996, 402 : 419 - 430
  • [37] Voltage-tunable dual-band infrared photodetectors with Si/SiGe metal-semiconductor-metal heterostructure
    Hwang, J. D.
    Hseih, K. H.
    MICROELECTRONIC ENGINEERING, 2008, 85 (11) : 2266 - 2268
  • [38] Continuously voltage-tunable electroluminescence from a monolayer of ZnS quantum dots
    Xuan, Rong-Wei
    Xu, Jian-Ping
    Zhang, Xiao-Song
    Li, Ping
    Luo, Cheng-Yuan
    Wu, Yan-Yu
    Li, Lan
    APPLIED PHYSICS LETTERS, 2011, 98 (04)
  • [39] Voltage-Tunable Superconducting Resonators: A Platform for Random Access Quantum Memory
    Sardashti K.
    Dartiailh M.C.
    Yuan J.
    Hart S.
    Gumann P.
    Shabani J.
    Shabani, Javad (jshabani@nyu.edu), 1600, Institute of Electrical and Electronics Engineers Inc. (01):
  • [40] Voltage-tunable lateral shifts of ballistic electrons in semiconductor quantum slabs
    Chen, Xi
    Ban, Yue
    Li, Chun-Fang
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)
12345