Development of Very High Luminance p-i-n Junction-Based Blue Fluorescent Organic Light-Emitting Diodes

被引:14
|
作者
Deng, Yali [1 ]
Murawski, Caroline [1 ,2 ]
Keum, Changmin [1 ]
Yoshida, Kou [1 ]
Samuel, Ifor D. W. [1 ]
Gather, Malte C. [1 ]
机构
[1] Univ St Andrews, Sch Phys & Astron, Organ Semicond Ctr, SUPA, St Andrews KY16 9SS, Fife, Scotland
[2] Kurt Schwabe Inst Mess & Sensortech eV Meinsberg, Kurt Schwabe Str 4, D-04736 Waldheim, Germany
来源
ADVANCED OPTICAL MATERIALS | 2020年 / 8卷 / 06期
基金
美国国家科学基金会; 英国工程与自然科学研究理事会; 新加坡国家研究基金会;
关键词
CMOS-compatible devices; device dimensions; electron-blocking layer; high brightness; high current density; organic light-emitting diodes; resistance of anode contact; ELECTROLUMINESCENCE; EFFICIENCY; TRANSPORT; EMITTERS; LAYER;
D O I
10.1002/adom.201901721
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic light-emitting diodes (OLEDs) can emit light over much larger areas than their inorganic counterparts, offer mechanical flexibility, and can be readily integrated on various substrates and backplanes. However, the amount of light they emit per unit area is typically lower and the required operating voltage is higher, which can be a limitation for emerging applications of OLEDs, e.g., in outdoor and high-dynamic-range displays, biomedical devices, or visible-light communication. Here, high-luminance, blue-emitting (lambda(peak) = 464 nm), fluorescent p-i-n OLEDs are developed by combining three strategies: First, the thickness of the intrinsic layers in the device is decreased to reduce internal voltage loss. Second, different electron-blocking layer materials are tested to recover efficiency losses resulting from this thickness reduction. Third, the geometry of the anode contact is optimized, which leads to a substantial reduction in the in-plane resistive voltage losses. The OLEDs retain a maximum external quantum efficiency of 4.4% as expected for an optimized fluorescent device and reach a luminance of 132 000 cd m(-2) and an optical power density of 2.4 mW mm(-2) at 5 V, a nearly eightfold improvement compared to the original reference device.
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Host Engineering for High Quantum Efficiency Blue and White Fluorescent Organic Light-Emitting Diodes
    Song, Wook
    Lee, Inho
    Lee, Jun Yeob
    ADVANCED MATERIALS, 2015, 27 (29) : 4358 - 4363
  • [42] White p-i-n organic light-emitting devices with high power efficiency and stable color
    Ho, Meng-Huan
    Hsu, Shih-Feng
    Ma, Jia-Wei
    Hwang, Shiao-Wen
    Yeh, Pu-Cheng
    Chen, Chin H.
    APPLIED PHYSICS LETTERS, 2007, 91 (11)
  • [43] Very high-efficiency organic light-emitting diodes based on cyclometallated rhenium (I) complex
    Li, Xiao
    Zhang, Dongyu
    Li, Wenlian
    Chu, Bei
    Han, Liangliang
    Zhu, Jianzhuo
    Su, Zisheng
    Bi, Defeng
    Wang, Dan
    Yang, Dongfang
    Chen, Yiren
    APPLIED PHYSICS LETTERS, 2008, 92 (08)
  • [44] In-line deposition of high-efficiency p-i-n organic light-emitting devices
    Toerker, M.
    Amelung, J.
    Eritt, M.
    Hill, D.
    Luber, C.
    Loeffler, F.
    May, Ch.
    Zschippang, Ch.
    Leo, Karl
    ORGANIC OPTOELECTRONICS AND PHOTONICS II, 2006, 6192
  • [45] Scalable Bilayer MoS2-Based Vertically Inverted p-i-n Light-Emitting Diodes
    Im, Healin
    Kim, Jungho
    Kim, Jiwan
    Kim, Sunkook
    ADVANCED MATERIALS INTERFACES, 2024, 11 (01)
  • [46] White Organic Light-emitting Diodes using the Tandem Structure Incorporating with Organic p/n Junction
    Lee, Hyun Koo
    Kwon, Do Sung
    Lee, Chunghee
    JOURNAL OF INFORMATION DISPLAY, 2007, 8 (02) : 20 - 24
  • [47] Exciton-polaron interaction in blue fluorescent organic light-emitting diodes
    Guan Sheng-Jie
    Zhou Lin-Jian
    Shen Cheng-Mei
    Zhang Yong
    ACTA PHYSICA SINICA, 2020, 69 (16)
  • [48] Efficient blue organic light-emitting diodes based on an oligoquinoline
    Kulkarni, AP
    Gifford, AP
    Tonzola, CJ
    Jenekhe, SA
    APPLIED PHYSICS LETTERS, 2005, 86 (06) : 1 - 3
  • [49] Deep blue organic light-emitting diodes based on triphenylenes
    Wettach, Henning
    Jester, Stefan S.
    Colsmann, Alexander
    Lemmer, Uli
    Rehmann, Nina
    Meerholz, Klaus
    Hoeger, Sigurd
    SYNTHETIC METALS, 2010, 160 (7-8) : 691 - 700
  • [50] ELECTRICAL-PROPERTIES OF LIGHT-EMITTING P-I-N GALLIUM-PHOSPHIDE DIODES
    DEMCHENKO, AM
    LEBEDEV, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1090 - 1092