Development of Very High Luminance p-i-n Junction-Based Blue Fluorescent Organic Light-Emitting Diodes

被引:14
|
作者
Deng, Yali [1 ]
Murawski, Caroline [1 ,2 ]
Keum, Changmin [1 ]
Yoshida, Kou [1 ]
Samuel, Ifor D. W. [1 ]
Gather, Malte C. [1 ]
机构
[1] Univ St Andrews, Sch Phys & Astron, Organ Semicond Ctr, SUPA, St Andrews KY16 9SS, Fife, Scotland
[2] Kurt Schwabe Inst Mess & Sensortech eV Meinsberg, Kurt Schwabe Str 4, D-04736 Waldheim, Germany
来源
ADVANCED OPTICAL MATERIALS | 2020年 / 8卷 / 06期
基金
美国国家科学基金会; 英国工程与自然科学研究理事会; 新加坡国家研究基金会;
关键词
CMOS-compatible devices; device dimensions; electron-blocking layer; high brightness; high current density; organic light-emitting diodes; resistance of anode contact; ELECTROLUMINESCENCE; EFFICIENCY; TRANSPORT; EMITTERS; LAYER;
D O I
10.1002/adom.201901721
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic light-emitting diodes (OLEDs) can emit light over much larger areas than their inorganic counterparts, offer mechanical flexibility, and can be readily integrated on various substrates and backplanes. However, the amount of light they emit per unit area is typically lower and the required operating voltage is higher, which can be a limitation for emerging applications of OLEDs, e.g., in outdoor and high-dynamic-range displays, biomedical devices, or visible-light communication. Here, high-luminance, blue-emitting (lambda(peak) = 464 nm), fluorescent p-i-n OLEDs are developed by combining three strategies: First, the thickness of the intrinsic layers in the device is decreased to reduce internal voltage loss. Second, different electron-blocking layer materials are tested to recover efficiency losses resulting from this thickness reduction. Third, the geometry of the anode contact is optimized, which leads to a substantial reduction in the in-plane resistive voltage losses. The OLEDs retain a maximum external quantum efficiency of 4.4% as expected for an optimized fluorescent device and reach a luminance of 132 000 cd m(-2) and an optical power density of 2.4 mW mm(-2) at 5 V, a nearly eightfold improvement compared to the original reference device.
引用
收藏
页数:8
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