Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition

被引：3
|
作者：
Jung, Mina [1 ]
Chang, Jiho [1 ]
Lee, Hyunjae [2 ]
Ha, Jun-seok [2 ]
Park, Jin-sub [2 ]
Park, Seungwhan [2 ]
Fujii, Katsushi [2 ]
Yao, Takafumi [2 ]
Kil, Gyung-suk [3 ]
Lee, Seogwoo [4 ]
Cho, Myungwhan [4 ]
Whang, Sungmin [5 ]
Seo, Yong-gon [5 ]
机构：
[1] Natl Korea Maritime Univ, Dept Nanosemicond Engn, Pusan 606791, South Korea
[2] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan
[3] Natl Korea Maritime Univ, Div Elect & Elect Engn, Pusan, South Korea
[4] Wavesquare Co, Yongin 449863, Gyeonggi, South Korea
[5] Korea Elect Technol Inst, Songnam 463816, Gyeonggi, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期
关键词：
gallium compounds; III-V semiconductors; MOCVD; photoluminescence; semiconductor growth; semiconductor thin films; spectral line broadening; stacking faults; THIN-FILMS; ALGAN;
D O I：
10.1116/1.3388889
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have studied the photoluminescence (PL) intensities of a-plane (11-20) GaN films (a-GaN) as a function of x-ray rocking-curve (XRC) linewidth values measured in both c- and m-axis directions. PL intensity of well-known luminescence lines such as 3.47 eV (bound exciton emission), 3.41 eV (basal-plane stacking fault related emission), and 3.29 eV (defect induced emission) are discussed in terms of XRC linewidth values. PL intensities reveal a close relationship with XRC linewidth measured in the c-axis direction, while an unusual relationship was observed between PL intensity and XRC linewidth in the m-axis direction. Inhomogeneous strain along the m-axis direction of a-GaN film is discussed as a cause of XRC linewidth broadening, rather than the formation of structural defects. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3388889]
引用
收藏
页码：623 / 626
页数：4
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