Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition

被引：3

作者：

Jung, Mina ^{[1
]}

Chang, Jiho ^{[1
]}

Lee, Hyunjae ^{[2
]}

Ha, Jun-seok ^{[2
]}

Park, Jin-sub ^{[2
]}

Park, Seungwhan ^{[2
]}

Fujii, Katsushi ^{[2
]}

Yao, Takafumi ^{[2
]}

Kil, Gyung-suk ^{[3
]}

Lee, Seogwoo ^{[4
]}

Cho, Myungwhan ^{[4
]}

Whang, Sungmin ^{[5
]}

Seo, Yong-gon ^{[5
]}

机构：

[1] Natl Korea Maritime Univ, Dept Nanosemicond Engn, Pusan 606791, South Korea

[2] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan

[3] Natl Korea Maritime Univ, Div Elect & Elect Engn, Pusan, South Korea

[4] Wavesquare Co, Yongin 449863, Gyeonggi, South Korea

[5] Korea Elect Technol Inst, Songnam 463816, Gyeonggi, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期

关键词：

gallium compounds; III-V semiconductors; MOCVD; photoluminescence; semiconductor growth; semiconductor thin films; spectral line broadening; stacking faults; THIN-FILMS; ALGAN;

D O I：

10.1116/1.3388889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have studied the photoluminescence (PL) intensities of a-plane (11-20) GaN films (a-GaN) as a function of x-ray rocking-curve (XRC) linewidth values measured in both c- and m-axis directions. PL intensity of well-known luminescence lines such as 3.47 eV (bound exciton emission), 3.41 eV (basal-plane stacking fault related emission), and 3.29 eV (defect induced emission) are discussed in terms of XRC linewidth values. PL intensities reveal a close relationship with XRC linewidth measured in the c-axis direction, while an unusual relationship was observed between PL intensity and XRC linewidth in the m-axis direction. Inhomogeneous strain along the m-axis direction of a-GaN film is discussed as a cause of XRC linewidth broadening, rather than the formation of structural defects. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3388889]

引用

页码：623 / 626

页数：4

共 50 条

[31] Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy
Lotsari, A.
Kehagias, Th.
Tsiakatouras, G.
Tsagaraki, K.
Katsikini, M.
Arvanitidis, J.
Christofilos, D.
Ves, S.
Komninou, Ph.
Georgakilas, A.
Dimitrakopulos, G. P.
JOURNAL OF APPLIED PHYSICS, 2014, 115 (21)
[32] Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE
Ma, Bei
Miyagawa, Reina
Hu, Weiguo
Li, Da-Bing
Miyake, Hideto
Hiramatsu, Kazumasa
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) : 2899 - 2902
[33] Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition
Yoo, Geunho
Park, Hyunsung
Lee, Donghun
Lim, Hyoungjin
Lee, Seunga
Kong, Bohyun
Cho, Hyungkoun
Park, Hyoungwon
Lee, Heon
Nam, Okhyun
CURRENT APPLIED PHYSICS, 2011, 11 (04) : S90 - S94
[34] Refractive indices of A-plane GaN thin films on R-plane sapphire
Cai, A. L.
Wellenius, I. P.
Gerhold, M.
Muth, J. F.
Osinsky, A.
Xie, J. Q.
Dong, J. W.
GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 581 - +
[35] Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition -: art. no. 093519
Paskov, PP
Schifano, R
Monemar, B
Paskova, T
Figge, S
Hommel, D
JOURNAL OF APPLIED PHYSICS, 2005, 98 (09)
[36] Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire
Tsuda, M
Furukawa, H
Honshio, A
Iwaya, M
Kamiyama, S
Amano, H
Akasaki, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4A): : 2509 - 2513
[37] Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate
Iwaya, M.
Okadome, Y.
Tsuchiya, Y.
Iida, D.
Miura, A.
Furukawa, H.
Honshio, A.
Miyake, Y.
Kamiyama, S.
Amano, H.
Akasaki, I.
PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 225 - +
[38] Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate
Iwaya, M.
Okadome, Y.
Tsuchiya, Y.
Iida, D.
Miura, A.
Furukawa, H.
Honshio, A.
Miyake, Y.
Kamiyama, S.
Amano, H.
Akasaki, I.
GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 137 - +
[39] Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire
Lee, Sung-Nam
Paek, H. S.
Son, J. K.
Sakong, T.
Nam, O. H.
Park, Y.
JOURNAL OF CRYSTAL GROWTH, 2007, 307 (02) : 358 - 362
[40] Morphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy
Kusakabe, K
Ohkawa, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (11): : 7931 - 7933

← 1 2 3 4 5 →