Formation mechanism of crater defects on HgCdTe/CdZnTe (211)B epilayers grown by molecular beam epitaxy

被引：28
|
作者：
Chang, Y [1 ]
Badano, G
Zhao, J
Grein, CH
Sivananthan, S
Aoki, T
Smith, DJ
机构：
[1] Univ Illinois, Dept Phys, Microphys Lab, Chicago, IL 60607 USA
[2] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
[3] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 23期
关键词：
D O I：
10.1063/1.1633017
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Crater defects on the surfaces of HgCdTe epilayers grown by molecular beam epitaxy have been investigated. A semiempirical model coupled with observations by transmission electron microscopy was used to analyze the defect formation mechanism. We find that Te-2 dissociation plays an important role. The defect density can be controlled by adjusting growth conditions such as the substrate growth temperature, Hg flux, growth rate and composition. Tight control over the pretreatment procedures before molecular beam epitaxy growth is also necessary. (C) 2003 American Institute of Physics.
引用
收藏
页码：4785 / 4787
页数：3
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