CDZNTE/ZNTE AND HGCDTE/CDTE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：7
|
作者：
FELDMAN, RD
机构：
[1] AT&T Bell Laboratories, Holmdel, New Jersey
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期
关键词：
D O I：
10.1116/1.576821
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The large range of band gaps and unique optical properties of II—VI semiconductors offer important opportunities for physics and device applications. Quantum wells based on Hg1-xCdxTe and Cd1-xZnxTe can give access to many of these properties, at wavelengths varying from the yellow to the long wavelength infrared region of the spectrum. High-quality quantum wells of these materials have been grown on GaAs substrates despite the large lattice mismatch. Growth, optical properties, and results of interdiffusion studies are discussed. © 1990, American Vacuum Society. All rights reserved.
引用
收藏
页码：1888 / 1893
页数：6
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