ZnGeP2 heterocontact with layered III-VI semiconductors

The photoelectric properties of heterojunctions fabricated by clamping wafers of ternary p-ZnGeP2 and InSe and GaSe layered semiconductors onto an optical contact have been studied for the first time and results are reported. The photosensitivity in these structures is greatest when they are illuminated from the side with the ZnGeP2 wafer, and reaches 150 V/W at T = 300 K. In InSe/ZnGeP2 heterostructures, a window effect is observed in the range 1.2-2 eV, whereas for GaSe/ZnGeP2 structures, the photovoltaic effect has a maximum near 2 eV because of the proximity of the band gaps in the contacting semiconductors. (C) 1997 American Institute of Physics. [S1063-7850(97)00106-7].