ZnGeP2 heterocontact with layered III-VI semiconductors

被引：5

作者：

Rud', VY ^{[1
]}

Rud', YV ^{[1
]}

机构：

[1] St Petersburg State Tech Univ, AF Ioffe Physicotech Inst, Russian Acad Sci, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 06期

关键词：

Window Effect; Layered Semiconductor; Photoelectric Property; Photovoltaic Effect; Optical Contact;

D O I：

10.1134/1.1261718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoelectric properties of heterojunctions fabricated by clamping wafers of ternary p-ZnGeP2 and InSe and GaSe layered semiconductors onto an optical contact have been studied for the first time and results are reported. The photosensitivity in these structures is greatest when they are illuminated from the side with the ZnGeP2 wafer, and reaches 150 V/W at T = 300 K. In InSe/ZnGeP2 heterostructures, a window effect is observed in the range 1.2-2 eV, whereas for GaSe/ZnGeP2 structures, the photovoltaic effect has a maximum near 2 eV because of the proximity of the band gaps in the contacting semiconductors. (C) 1997 American Institute of Physics. [S1063-7850(97)00106-7].

引用

页码：415 / 416

页数：2

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