Influence of processing conditions on performance and stability in polycrystalline thin-film CdTe-based solar cells

被引：0
|
作者：
McCandless, BE [1 ]
Birkmire, RW [1 ]
机构：
[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
来源：
NCPV PHOTOVOLTAICS PROGRAM REVIEW: PROCEEDINGS OF THE 15TH CONFERENCE | 1999年 / 462卷
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The influence of processing conditions on the performance of polycrystalline thin-film CdTe-based solar cells and the relationship to device stability are addressed, Specifically, processing conditions with respect to the window layer, post-CdTe deposition treatments, and contacting treatments are examined. The use of high resistivity interlayers between the transparent conductive oxide and the CdS allows open circuit voltage to be maintained as the CdS thickness is reduced. CdS-CdTe interdiffusion is reduced by either use of a short 600 degrees C anneal prior to CdCl2 vapor treatment or by use of CdTe1.S-x(x) alloy absorber layers. Finally, the effects of CdTe1.S-x(x) surface modification and Cu reaction on device current-voltage behavior ore presented.
引用
收藏
页码：182 / 187
页数：6
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