Influence of processing conditions on performance and stability in polycrystalline thin-film CdTe-based solar cells

The influence of processing conditions on the performance of polycrystalline thin-film CdTe-based solar cells and the relationship to device stability are addressed, Specifically, processing conditions with respect to the window layer, post-CdTe deposition treatments, and contacting treatments are examined. The use of high resistivity interlayers between the transparent conductive oxide and the CdS allows open circuit voltage to be maintained as the CdS thickness is reduced. CdS-CdTe interdiffusion is reduced by either use of a short 600 degrees C anneal prior to CdCl2 vapor treatment or by use of CdTe1.S-x(x) alloy absorber layers. Finally, the effects of CdTe1.S-x(x) surface modification and Cu reaction on device current-voltage behavior ore presented.