MOS interface control for GaN power transistors

被引：1
|
作者：
Hashizume, Tamotsu [1 ,2 ]
机构：
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0600814, Japan
[2] Nagoya Univ, Inst Mat & Syst Sustainabil IMaSS, Nagoya, Aichi 4618601, Japan
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
关键词：
GaN; MOS; interface states; PMA; HEMT; operation stability;
D O I：
10.1109/iciprm.2019.8819129
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents effects of post-metallization annealing (PMA) on interface properties of GaN MOS structures using Al2O3 prepared by ALD. Excellent C-V characteristics without frequency dispersion were observed in the MOS sample after PMA in N-2 ambient at 300 - 400 degrees C. The PMA process was effective in improving gate controllability and current linearity of the AlGaN/GaN HEMTs on a GaN substrate. Even at 150 degrees C, the HEMT showed low leakage current of 1.5 x 10(-9) A/mm and a threshold voltage drift of only 0.25 V from its room temperature value.
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页数：2
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