Effect of N2O plasma treatment on the performance of ZnO TFTs

被引：58

作者：

Remashan, K. ^{[1
]}

Hwang, D. K. ^{[2
]}

Park, S. D. ^{[3
]}

Bae, J. W. ^{[3
]}

Yeom, G. Y. ^{[3
]}

Park, S. J. ^{[2
]}

Jang, J. H. ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[3] Sungkyunkwan Univ, Dept Mat Sci & Engn, Suwon 440746, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 03期

关键词：

D O I：

10.1149/1.2822885

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide (N2O) plasma treatment improved the performance of zinc oxide (ZnO) thin-film transistors (TFTs) in terms of off current and on/off current ratio by almost 2 orders of magnitude. The off Current of 2 x 10(-8) A and on/off current ratio of 3 x 10(3) obtained after RTA were improved to 10(-10) A and 10(5), respectively, by the subsequent N2O plasma treatment. X-ray photoelectron spectroscopy analysis of the TFT samples showed that the RTA-treated ZnO surface had more oxygen vacancies as compared to as-deposited samples, and the oxygen vacancies at the surface of RTA-treated ZnO were reduced by subsequent N2O plasma treatment. The reduction of oxygen vacancies at the top region of the ZnO channel is the cause of better off current and on/off current ratio of the TFTs. (c) 2007 The Electrochemical Society.

引用

页码：H55 / H59

页数：5

共 50 条

[31] Second gas effect of N2O
Lin, CY
CANADIAN JOURNAL OF ANAESTHESIA-JOURNAL CANADIEN D ANESTHESIE, 2001, 48 (08): : 828 - 829
[32] A comparison of plasma-activated N2/O2 and N2O/O2 mixtures for use in ZnO:N synthesis by chemical vapor deposition
Barnes, TM
Leaf, J
Hand, S
Fry, C
Wolden, CA
JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) : 7036 - 7044
[33] Effect of the Number of Methyl Groups in DMOF on N2O Adsorption and N2O/N2 Separation
Wang, Li
Ye, Zhangmiao
Wang, Mingxi
Liu, Zhaozhuang
Li, Jinping
Yang, Jiangfeng
INORGANIC CHEMISTRY, 2024, 63 (25) : 11501 - 11505
[34] The effect of γ-irradiation on citrus pectin in N2O and N2O/O2 saturated aqueous solutions
Zegota, H
FOOD HYDROCOLLOIDS, 1999, 13 (01) : 51 - 58
[35] Impact of N2O Plasma Reactant on PEALD-SiO2 Insulator for Remarkably Reliable ALD-Oxide Semiconductor TFTs
Kim, Dong-Gyu
Yoo, Kwang Su
Kim, Hye-Mi
Park, Jin-Seong
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (06) : 3199 - 3205
[36] Decomposition of N2O by microwave discharge of N2O/He or N2O/Ar mixtures
Tsuji, M
Tanoue, T
Kumagae, J
Nakano, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (12): : 7091 - 7097
[37] Contribution of dissolved N2O in total N2O emission from sewage treatment plant
Masuda, Shuhei
Otomo, Shohei
Maruo, Chikako
Nishimura, Osamu
CHEMOSPHERE, 2018, 212 : 821 - 827
[38] Enhancement of N2O decomposition performance by N2O pretreatment over Ce-Co-O catalyst
Chang, Huazhen (chz@ruc.edu.cn), 1600, Elsevier B.V., Netherlands (347):
[39] Enhancement of N2O decomposition performance by N2O pretreatment over Ce-Co-O catalyst
You, Yanchen
Chang, Huazhen
Ma, Lei
Guo, Lei
Qin, Xuan
Li, Jiayin
Li, Junhua
CHEMICAL ENGINEERING JOURNAL, 2018, 347 : 184 - 192
[40] Effect of N2O treatment on performance of back channel etched metal oxide thin film transistors
Xu Hua
Liu Jing-Dong
Cai Wei
Li Min
Xu Miao
Tao Hong
Zou Jian-Hua
Peng Jun-Biao
ACTA PHYSICA SINICA, 2022, 71 (05)

← 1 2 3 4 5 →