Effect of N2O plasma treatment on the performance of ZnO TFTs

被引：58

作者：

Remashan, K. ^{[1
]}

Hwang, D. K. ^{[2
]}

Park, S. D. ^{[3
]}

Bae, J. W. ^{[3
]}

Yeom, G. Y. ^{[3
]}

Park, S. J. ^{[2
]}

Jang, J. H. ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[3] Sungkyunkwan Univ, Dept Mat Sci & Engn, Suwon 440746, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 03期

关键词：

D O I：

10.1149/1.2822885

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide (N2O) plasma treatment improved the performance of zinc oxide (ZnO) thin-film transistors (TFTs) in terms of off current and on/off current ratio by almost 2 orders of magnitude. The off Current of 2 x 10(-8) A and on/off current ratio of 3 x 10(3) obtained after RTA were improved to 10(-10) A and 10(5), respectively, by the subsequent N2O plasma treatment. X-ray photoelectron spectroscopy analysis of the TFT samples showed that the RTA-treated ZnO surface had more oxygen vacancies as compared to as-deposited samples, and the oxygen vacancies at the surface of RTA-treated ZnO were reduced by subsequent N2O plasma treatment. The reduction of oxygen vacancies at the top region of the ZnO channel is the cause of better off current and on/off current ratio of the TFTs. (c) 2007 The Electrochemical Society.

引用

页码：H55 / H59

页数：5

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