Microstructural and optical properties of Ag assisted β-Ga2O3 nanowires on silicon substrate

被引：14
|
作者：
Meitei, Shagolsem Romeo [1 ]
Ngangbam, Chitralekha [2 ]
Singh, Naorem Khelchand [1 ]
机构：
[1] Natl Inst Technol Nagaland, Dept Elect & Commun Engn, Dimapur 797103, India
[2] Natl Inst Technol Manipur, Dept Elect & Commun Engn, Imphal 795001, Manipur, India
来源：
OPTICAL MATERIALS | 2021年 / 117卷 / 117期
关键词：
Ag NP; XRD; Photoluminescence; UV-Vis absorption; beta-Ga < sub > 2 <; sub > O < sub > 3&nbsp; sub > NW; BETA-GA2O3; SINGLE-CRYSTALS; FILMS;
D O I：
10.1016/j.optmat.2021.111190
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, Silver nanoparticle assisted vertically aligned beta -Ga2O3 nanowires (Ag NP-beta -Ga2O3 NW) were fabricated on Silicon (Si) -substrate by Glancing angle deposition (GLAD) technique. With the integration of Ag NP, the XRD pattern exhibits a reduction in the crystallite size of beta -Ga2O3 NW. The EDS analysis confirms the presence of Ag NP, thereby further supporting the XRD result. The SEM image analysis shows a consistency in the size (40-50 nm) of NW growth for Ag NP-beta -Ga2O3 NW. The photoluminescence spectra show an enhancement in the Ag NP-beta -Ga2O3 NW structure. Lastly, the optical absorption spectra of beta -Ga2O3 NW and Ag NP-beta -Ga2O3 NW reveals that the presence of Ag NP in beta -Ga2O3 NW enhance the photon absorption in the UV and the visible region as compared to beta -Ga2O3 NW due to the synergistic action of Ag NP and beta -Ga2O3 NW. This study demonstrates that high-quality Ag NP-beta -Ga2O3 NW nanostructure can be grown in large quantities for a variety of applications, including photodetector, gas sensor, and power devices applications.
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页数：5
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