Microstructural and optical properties of Ag assisted β-Ga2O3 nanowires on silicon substrate

被引：14
|
作者：
Meitei, Shagolsem Romeo [1 ]
Ngangbam, Chitralekha [2 ]
Singh, Naorem Khelchand [1 ]
机构：
[1] Natl Inst Technol Nagaland, Dept Elect & Commun Engn, Dimapur 797103, India
[2] Natl Inst Technol Manipur, Dept Elect & Commun Engn, Imphal 795001, Manipur, India
来源：
OPTICAL MATERIALS | 2021年 / 117卷 / 117期
关键词：
Ag NP; XRD; Photoluminescence; UV-Vis absorption; beta-Ga < sub > 2 <; sub > O < sub > 3&nbsp; sub > NW; BETA-GA2O3; SINGLE-CRYSTALS; FILMS;
D O I：
10.1016/j.optmat.2021.111190
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, Silver nanoparticle assisted vertically aligned beta -Ga2O3 nanowires (Ag NP-beta -Ga2O3 NW) were fabricated on Silicon (Si) -substrate by Glancing angle deposition (GLAD) technique. With the integration of Ag NP, the XRD pattern exhibits a reduction in the crystallite size of beta -Ga2O3 NW. The EDS analysis confirms the presence of Ag NP, thereby further supporting the XRD result. The SEM image analysis shows a consistency in the size (40-50 nm) of NW growth for Ag NP-beta -Ga2O3 NW. The photoluminescence spectra show an enhancement in the Ag NP-beta -Ga2O3 NW structure. Lastly, the optical absorption spectra of beta -Ga2O3 NW and Ag NP-beta -Ga2O3 NW reveals that the presence of Ag NP in beta -Ga2O3 NW enhance the photon absorption in the UV and the visible region as compared to beta -Ga2O3 NW due to the synergistic action of Ag NP and beta -Ga2O3 NW. This study demonstrates that high-quality Ag NP-beta -Ga2O3 NW nanostructure can be grown in large quantities for a variety of applications, including photodetector, gas sensor, and power devices applications.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Optical properties of Ga2O3 doped ZnO nanoribbons
    Stoehr, M
    Juillaguet, S
    Kyaw, TM
    Wen, JG
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4, 2005, 2 (04): : 1314 - 1318
  • [22] Effects of strain on the optical and thermodynamic properties of β-Ga2O3
    Santia, M. D.
    Tandon, N.
    Albrecht, J. D.
    SOLID STATE COMMUNICATIONS, 2019, 297 (1-5) : 1 - 5
  • [23] Optical properties of mist CVD grown κ-Ga2O3
    Ul Muazzam, Usman
    Chavan, Prasad S.
    Muralidharan, Rangarajan
    Raghavan, Srinivasan
    Nath, Digbijoy N.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (05)
  • [24] Microstructural and electrical properties of Ga2O3 nanowires grown at various temperatures by vapor-liquid-solid technique
    Cuong, Nguyen Duy
    Park, Yeon Woong
    Yoon, Soon Gil
    SENSORS AND ACTUATORS B-CHEMICAL, 2009, 140 (01) : 240 - 244
  • [25] Transparent Conductive Electrodes of β-Ga2O3/Ag/β-Ga2O3 Multilayer for Ultraviolet Emitters
    Kim, Si-Won
    Lee, Hyo-Ju
    Oh, Semi
    Noh, Beom-Rae
    Park, So-Yeon
    Im, Ye-Bin
    Son, Suyeon
    Song, Yong Won
    Kim, Kyoung-Kook
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 19 (10) : 6328 - 6333
  • [26] SYNTHESIS AND CHARACTERIZATION OF GA2O3 AND IN2O3 NANOWIRES
    Stafiniak, Andrzej
    Prazmowska, Joanna
    Korbutowicz, Ryszard
    Serafinczuk, Jaroslaw
    Paszkiewicz, Regina
    ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING, 2019, 17 (02) : 229 - 233
  • [27] Direct conversion of β-Ga2O3 thin films to β-Ga2O3 nanowires by annealing in a hydrogen atmosphere
    Cha, Su Yeon
    Ahn, Byeong-Gon
    Kang, Hyon Chol
    Lee, Su Yong
    Noh, Do Young
    CERAMICS INTERNATIONAL, 2018, 44 (14) : 16470 - 16474
  • [28] Red luminescence of Cr in β-Ga2O3 nanowires
    Nogales, Emilio
    Garcia, Jose A.
    Mendez, Bianchi
    Piqueras, Javier
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
  • [29] Synthesis of β-Ga2O3 nanowires as a broadband emitter
    L. C. Tien
    C. H. Ho
    X. T. Yao
    J. R. Cai
    Applied Physics A, 2011, 102 : 105 - 108
  • [30] Catalytic growth and characterization of Ga2O3 nanowires
    K.-W. Chang
    J.-J. Wu
    Applied Physics A, 2003, 76 : 629 - 631
12345