Scaling Analysis of Nanowire Phase-Change Memory

被引:21
|
作者
Liu, Jie [1 ]
Yu, Bin [2 ]
Anantram, M. P. [1 ]
机构
[1] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA
[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
基金
美国国家科学基金会;
关键词
Device scaling; electrothermal transport; nanowire (NW); phase-change memory (PCM); RESET current and energy; NONVOLATILE;
D O I
10.1109/LED.2011.2162390
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter analyzes the scaling property of nanowire (NW) phase-change memory (PCM) using analytic and numerical methods. The scaling scenarios of the three widely used NWPCM operation schemes (i.e., constant electric field, voltage, and current) are studied and compared. It is shown that if the device size is downscaled by a factor of 1/k (k > 1), the operation energy (current) will be reduced by more than k(3) (k) times, and the operation speed will be increased by k(2) times. It is also shown that more than 90% of operation energy is wasted as thermal flux into substrate and electrodes. We predict that, if the wasted thermal flux is effectively reduced by heat confinement technologies, the energy consumed per RESET operation can be decreased from about 1 pJ to less than 100 fJ. It is shown that reducing NW aspect ratio helps decreasing PCM energy consumption. It is revealed that cross-cell thermal proximity disturbance is counter intuitively alleviated by scaling, leading to a desirable scaling scenario.
引用
收藏
页码:1340 / 1342
页数:3
相关论文
共 50 条
  • [1] Scaling analysis of phase-change memory technology
    Pirovano, A
    Lacaita, AL
    Benvenuti, A
    Pellizzer, F
    Hudgens, S
    Bez, R
    [J]. 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 699 - 702
  • [2] Indium selenide nanowire phase-change memory
    Yu, Bin
    Ju, Sanghyun
    Sun, Xuhui
    Ng, Garrick
    Nguyen, Thuc Dinh
    Meyyappan, M.
    Janes, David B.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (13)
  • [3] Scaling properties of phase-change line memory
    杜小锋
    宋三年
    宋志棠
    刘卫丽
    吕士龙
    顾怡峰
    薛维佳
    席韡
    [J]. Chinese Physics B, 2012, 21 (09) : 554 - 558
  • [4] Scaling properties of phase-change line memory
    Du Xiao-Feng
    Song San-Nian
    Song Zhi-Tang
    Liu Wei-Li
    Lu Shi-Long
    Gu Yi-Feng
    Xue Wei-Jia
    Xi Wei
    [J]. CHINESE PHYSICS B, 2012, 21 (09)
  • [5] Towards Ultimate Scaling Limits of Phase-Change Memory
    Xiong, F.
    Yalon, E.
    Behnam, A.
    Neuman, C. M.
    Grosse, K. L.
    Deshmukh, S.
    Pop, E.
    [J]. 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
  • [6] Compact Thermal Model for Vertical Nanowire Phase-Change Memory Cells
    Chen, I-Ru
    Pop, Eric
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (07) : 1523 - 1528
  • [7] Phase-change memory
    Eiichi Kuramochi
    Masaya Notomi
    [J]. Nature Photonics, 2015, 9 : 712 - 714
  • [8] Integrating phase-change memory cell with Ge nanowire diode for crosspoint memory-experimental demonstration and analysis
    Kim, SangBum
    Zhang, Yuan
    McVittie, James P.
    Jagannathan, Hemanth
    Nishi, Yoshio
    Wong, H. -S. Philip
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (09) : 2307 - 2313
  • [9] Scaling of Data Retention Statistics in Phase-Change Random Access Memory
    Kwon, Yongwoo
    Park, Byoungnam
    Kang, Dae-Hwan
    [J]. IEEE ELECTRON DEVICE LETTERS, 2015, 36 (05) : 454 - 456
  • [10] Reset Current Scaling in Phase-Change Memory Cells: Modeling and Experiments
    Bergonzoni, Carlo
    Borghi, Massimo
    Palumbo, Elisabetta
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (02) : 283 - 291