Scaling properties of phase-change line memory

被引：0

作者：

杜小锋 ^{[1
]}

宋三年 ^{[1
]}

宋志棠 ^{[1
]}

刘卫丽 ^{[1
]}

吕士龙 ^{[1
]}

顾怡峰 ^{[1
]}

薛维佳 ^{[1
]}

席韡 ^{[1
]}

机构：

[1] State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences

来源：

Chinese Physics B | 2012年 / 21卷 / 09期

基金：

中国国家自然科学基金;

关键词：

phase-change memory; line structure; scaling properties; three-dimensional simulation;

D O I：

暂无

中图分类号：

TP333 [存贮器];

学科分类号：

081201 ;

摘要：

Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current-voltage (I-V ) and resistance-voltage (R-V ) characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase-change line memory. The results show that the resistive amorphous (RESET) power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.

引用

页码：554 / 558

页数：5

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