Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

被引：45

作者：

Tseng, Yi-Ting ^{[1
]}

Tsai, Tsung-Ming ^{[2
]}

Chang, Ting-Chang ^{[1
,3
]}

Shih, Chih-Cheng ^{[2
]}

Chang, Kuan-Chang ^{[2
]}

Zhang, Rui ^{[4
]}

Chen, Kai-Huang ^{[5
]}

Chen, Jung-Hui ^{[6
]}

Li, Yu-Chiuan ^{[2
]}

Lin, Chih-Yang ^{[1
]}

Hung, Ya-Chi ^{[2
]}

Syu, Yong-En ^{[1
]}

Zheng, Jin-Cheng ^{[7
]}

Sze, Simon M. ^{[1
,8
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 700, Taiwan

[4] China Natl Petr Cooperat, BGP, Ctr Informat Technol, Beijing 100007, Peoples R China

[5] Tung Fang Design Inst, Dept Elect Engn & Comp Sci, Kaohsiung 829, Taiwan

[6] Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung 802, Taiwan

[7] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[8] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 21期

关键词：

THIN-FILM TRANSISTORS; CO2 FLUID TREATMENT; RRAM DEVICES; OXIDE; BILAYER; TRAPS;

D O I：

10.1063/1.4921239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study of resistance random access memory in a resistive switching film, the breakdown degree was controlled by varying forming current compliance. A SiOx layer was introduced into the ZnO layer of the structure to induce both typical bipolar resistive switching (RS) and complementary resistive switching (CRS). In addition, the SiOx layer- generated vacuum spaces in typical bipolar RS can be verified by electrical characteristics. Changing forming current compliance strikingly modifies the oxygen storage capacity of the inserted SiOx layer. CRS can be achieved, therefore, by tuning the oxygen ion storage behavior made possible by the SiOx layer. (C) 2015 AIP Publishing LLC.

引用

页数：4

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