Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer

被引：10

作者：

Bradford, C ^{[1
]}

Currran, A ^{[1
]}

Balocchi, A ^{[1
]}

Cavenett, BC ^{[1
]}

Prior, KA ^{[1
]}

Warburton, RJ ^{[1
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

etching; solubility; MBE; quantum wells; sulphides; semiconducting II-VI compounds;

D O I：

10.1016/j.jcrysgro.2005.01.019

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial Lift-Off of ZnSe/ZnCdSe and MgS/ZnCdSe quantum well structures from their GaAs substrate has been achieved by using highly reactive MgS as the sacrificial layer. This technique has proved possible in II-VI semiconductor materials due to the huge contrast in the etch rates between the metastable MgS release layer and the II-VI quantum well materials. In this paper, we outline the epitaxial lift-off technique used and confirm the success of the new method using photoluminescence experiments taken before and after lift-off. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：325 / 328

页数：4

共 21 条

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Davidson, Ian A.
Moug, Richard T.
Vallance, Erin C.
Tamargo, Maria C.
Prior, Kevin A.
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[2] Epitaxial lift-off of II-VI semiconductors from III-V substrates using a MgS release layer
Rajan, Akhil
Davidson, Ian A.
Moug, Richard T.
Prior, Kevin A.
JOURNAL OF APPLIED PHYSICS, 2013, 114 (24)
[3] EPITAXIAL LIFT-OFF OF ZNSE BASED II-VI STRUCTURES
BRYS, C
VERMAERKE, F
DEMEESTER, P
VANDAELE, P
RAKENNUS, K
SALOKATVE, A
UUSIMAA, P
PESSA, M
BRADLEY, AL
DORAN, JP
OGORMAN, J
HEGARTY, J
APPLIED PHYSICS LETTERS, 1995, 66 (09) : 1086 - 1088
[4] Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys
Moug, R.
Bradford, C.
Curran, A.
Izdebski, F.
Davidson, I.
Prior, K. A.
Warburton, R. J.
MICROELECTRONICS JOURNAL, 2009, 40 (03) : 530 - 532
[5] Epitaxial liftoff of ZnSe-based heterostructures using a II-VI release layer
Balocchi, A
Curran, A
Graham, TCM
Bradford, C
Prior, KA
Warburton, RJ
APPLIED PHYSICS LETTERS, 2005, 86 (01) : 011915 - 1
[6] Epitaxial Lift Off of II-VI Thin Films Using Water-Soluble MgTe
Campbell, Calli M.
Tsai, Cheng-Ying
Ding, Jia
Zhang, Yong-Hang
IEEE JOURNAL OF PHOTOVOLTAICS, 2019, 9 (06): : 1834 - 1838
[7] Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process
Voncken, MMAJ
Schermer, JJ
Bauhuis, GJ
Mulder, P
Larsen, PK
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (07): : 1801 - 1807
[8] Photoconductive switch using epitaxial lift-off low-temperature-grown GaAs
Lan, T
Ni, GQ
ADVANCES IN MICROELECTRONIC DEVICE TECHNOLOGY, 2001, 4600 : 179 - 183
[9] Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process
M.M.A.J. Voncken
J.J. Schermer
G.J. Bauhuis
P. Mulder
P.K. Larsen
Applied Physics A, 2004, 79 : 1801 - 1807
[10] HF species and dissolved oxygen on the epitaxial lift-off process of GaAs using AlAsP release layers
van Niftrik, A. T. J.
Schermer, J. J.
Bauhuis, G. J.
Mulder, P.
Larsen, P. K.
van Setten, M. J.
Attema, J. J.
Tan, N. C. G.
Kelly, J. J.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (01) : D35 - D39

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