Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer

被引：10

作者：

Bradford, C ^{[1
]}

Currran, A ^{[1
]}

Balocchi, A ^{[1
]}

Cavenett, BC ^{[1
]}

Prior, KA ^{[1
]}

Warburton, RJ ^{[1
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

etching; solubility; MBE; quantum wells; sulphides; semiconducting II-VI compounds;

D O I：

10.1016/j.jcrysgro.2005.01.019

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial Lift-Off of ZnSe/ZnCdSe and MgS/ZnCdSe quantum well structures from their GaAs substrate has been achieved by using highly reactive MgS as the sacrificial layer. This technique has proved possible in II-VI semiconductor materials due to the huge contrast in the etch rates between the metastable MgS release layer and the II-VI quantum well materials. In this paper, we outline the epitaxial lift-off technique used and confirm the success of the new method using photoluminescence experiments taken before and after lift-off. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：325 / 328

页数：4