EPITAXIAL LIFT-OFF OF ZNSE BASED II-VI STRUCTURES

The epitaxial lift-off technique is applied to II-VI based structures. Epilayers of 255 nm thickness containing quantum wells are lifted off their substrates and redeposited onto polyimide coated GaAs. The technique has also been applied to II-VI samples onto which dielectric films had been deposited. Photoluminescence measurements show that the material quality has not been degraded during the processing. The success of this technique with II-VI's opens up many possibilities for the integration of these materials with metals and dielectrics in vertical structure devices.© 1995 American Institute of Physics.