Lattice vibration properties of MoS2/PtSe2 heterostructures

被引:9
|
作者
Li, Kuilong [1 ,2 ]
Wang, Tianyi [3 ]
Wang, Wenjia [1 ]
Gao, Xingguo [1 ]
机构
[1] Qilu Univ Technol, Shandong Acad Sci, Sch Elect & Informat Engn, Dept Phys, Jinan 250353, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[3] Shandong Univ, Sch Phys, Jinan 250110, Peoples R China
基金
中国国家自然科学基金;
关键词
MoS2/PtSe2; heterostructure; Raman spectrum; Temperature coefficient; Lattice vibration; TRANSITION-METAL-DICHALCOGENIDE; DEPENDENT RAMAN-SPECTROSCOPY; CHEMICAL-VAPOR-DEPOSITION; MOLYBDENUM-DISULFIDE; PTSE2; FABRICATION; SPECTRA;
D O I
10.1016/j.jallcom.2019.153192
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, large-area contiguous triplelayer PtSe2, monolayer MoS2, and MoS2/PtSe2 heterostructures were fabricated using chemical vapor deposition combined with the transfer technology. The temperature-dependent Raman spectrum demonstrates that the in-plane and out-of-plane PtSe2 -and MoS2 -related active modes all display red shift with increasing temperature. In addition, the temperature coefficient deduced from the MoS2/PtSe2 heterostructure is much smaller than the corresponding value obtained from the pristine MoS2 and PtSe2 films, demonstrating a better thermal stability of the heterostructure. A strong interlayer coupling in triplelayer PtSe2 and small thermal expansion mismatch together with the layer interaction between MoS2 and PtSe2 are ascribed to this softening of phonon shifts. Such study firstly contributes to the fundamental exploration of the lattice vibration properties of the MoS2/PtSe2 heterostructure and offers significant guidance for the PtSe2 -based device design and fabrication. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页数:7
相关论文
共 50 条
  • [31] Edge Conductivity in PtSe2 Nanostructures
    Kempt, Roman
    Kuc, Agnieszka
    Brumme, Thomas
    Heine, Thomas
    SMALL STRUCTURES, 2024, 5 (02):
  • [32] Broadband Optical Properties of Atomically Thin PtS2 and PtSe2
    Ermolaev, Georgy A.
    Voronin, Kirill V.
    Tatmyshevskiy, Mikhail K.
    Mazitov, Arslan B.
    Slavich, Aleksandr S.
    Yakubovsky, Dmitry I.
    Tselin, Andrey P.
    Mironov, Mikhail S.
    Romanov, Roman I.
    Markeev, Andrey M.
    Kruglov, Ivan A.
    Novikov, Sergey M.
    Vyshnevyy, Andrey A.
    Arsenin, Aleksey V.
    Volkov, Valentyn S.
    NANOMATERIALS, 2021, 11 (12)
  • [33] Filamentary superconductivity in wrinkled PtSe2
    Yuan, Yahua
    Duan, Yuxia
    Wang, Zhongwang
    Sun, Jian
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (21)
  • [34] Phase engineering of MoS2 heterostructures
    Allard, Charlotte
    NATURE REVIEWS MATERIALS, 2023, 8 (12) : 778 - 778
  • [35] Strain effects on electronic states and lattice vibration of monolayer MoS2
    Miao, Ya-ping
    Ma, Fei
    Huang, Yu-hong
    Xu, Ke-wei
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2015, 71 : 1 - 6
  • [36] Barrier-free semimetallic PtSe2 contact formation in two-dimensional PtSe2/PtSe2 homostructure for high-performance field-effect transistors
    Kim, Yun-Ho
    Kang, Min-Sung
    Choi, Jae Won
    Lee, Won-Yong
    Kim, Min-Jeong
    Park, No-Won
    Yoon, Young-Gui
    Kim, Gil-Sung
    Lee, Sang-Kwon
    APPLIED SURFACE SCIENCE, 2023, 638
  • [37] High sensitivity photodetectors of PtS2/AlN 2 /AlN and PtSe2/AlN 2 /AlN heterostructures
    Liu, Chenxing
    Cui, Zhen
    Zhang, Shuang
    Wang, Lu
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2024, 194
  • [38] One-step synthesis of two-dimensional PdSe2/PtSe2 heterostructures
    Fan, Jin-Le
    Qin, Wei-Wei
    Liu, Zhi-Yuan
    Zhou, Ming
    MATERIALS LETTERS, 2023, 352
  • [39] Tunable MoS2 bandgap in MoS2-graphene heterostructures
    Ebnonnasir, Abbas
    Narayanan, Badri
    Kodambaka, Suneel
    Ciobanu, Cristian V.
    APPLIED PHYSICS LETTERS, 2014, 105 (03)
  • [40] Electron transport properties of PtSe2 nanoribbons with distinct edge reconstructions
    Zheng, Peiru
    Jiang, Yanyan
    Li, Hui
    Dai, Xinyue
    RSC ADVANCES, 2022, 12 (40) : 25872 - 25880