Lattice vibration properties of MoS2/PtSe2 heterostructures

被引:9
|
作者
Li, Kuilong [1 ,2 ]
Wang, Tianyi [3 ]
Wang, Wenjia [1 ]
Gao, Xingguo [1 ]
机构
[1] Qilu Univ Technol, Shandong Acad Sci, Sch Elect & Informat Engn, Dept Phys, Jinan 250353, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[3] Shandong Univ, Sch Phys, Jinan 250110, Peoples R China
基金
中国国家自然科学基金;
关键词
MoS2/PtSe2; heterostructure; Raman spectrum; Temperature coefficient; Lattice vibration; TRANSITION-METAL-DICHALCOGENIDE; DEPENDENT RAMAN-SPECTROSCOPY; CHEMICAL-VAPOR-DEPOSITION; MOLYBDENUM-DISULFIDE; PTSE2; FABRICATION; SPECTRA;
D O I
10.1016/j.jallcom.2019.153192
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, large-area contiguous triplelayer PtSe2, monolayer MoS2, and MoS2/PtSe2 heterostructures were fabricated using chemical vapor deposition combined with the transfer technology. The temperature-dependent Raman spectrum demonstrates that the in-plane and out-of-plane PtSe2 -and MoS2 -related active modes all display red shift with increasing temperature. In addition, the temperature coefficient deduced from the MoS2/PtSe2 heterostructure is much smaller than the corresponding value obtained from the pristine MoS2 and PtSe2 films, demonstrating a better thermal stability of the heterostructure. A strong interlayer coupling in triplelayer PtSe2 and small thermal expansion mismatch together with the layer interaction between MoS2 and PtSe2 are ascribed to this softening of phonon shifts. Such study firstly contributes to the fundamental exploration of the lattice vibration properties of the MoS2/PtSe2 heterostructure and offers significant guidance for the PtSe2 -based device design and fabrication. (C) 2019 Elsevier B.V. All rights reserved.
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页数:7
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