Study of electrical transport of hole-doped TPD

被引:2
|
作者
Ray, Debdutta [1 ]
Patankar, Meghan P. [1 ]
Narasimhan, K. L. [1 ]
机构
[1] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India
关键词
capacitance; conductivity; doping; organic semiconductor;
D O I
10.1109/IWPSD.2007.4472594
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we study the electrical properties of hole-doped TPD using C-V and I-V-T measurements. F4-TCNQ is the acceptor molecule used to dope TPD. From CV measurements the Fermi level of the system is determined to he at 0.15 eV with respect to the HOMO of TPD. The activation energy of the hole mobility, is found from temperature dependence of the ohmic dark current.
引用
收藏
页码:619 / 620
页数:2
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