Study of electrical transport of hole-doped TPD

被引：2

作者：

Ray, Debdutta ^{[1
]}

Patankar, Meghan P. ^{[1
]}

Narasimhan, K. L. ^{[1
]}

机构：

[1] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India

来源：

PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年

关键词：

capacitance; conductivity; doping; organic semiconductor;

D O I：

10.1109/IWPSD.2007.4472594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we study the electrical properties of hole-doped TPD using C-V and I-V-T measurements. F4-TCNQ is the acceptor molecule used to dope TPD. From CV measurements the Fermi level of the system is determined to he at 0.15 eV with respect to the HOMO of TPD. The activation energy of the hole mobility, is found from temperature dependence of the ohmic dark current.

引用

页码：619 / 620

页数：2

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