Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs(100) matrix

被引：0
|
作者：
Tsatsulnikov, AF
Ledentsov, NN
Maksimov, MV
Egorov, AY
Zhukov, AE
Ustinov, VM
Volovik, BV
Krestnikov, IL
Kovsh, AR
Sakharov, AV
Bert, NA
Kopev, PS
Alferov, ZI
机构：
来源：
SEMICONDUCTORS | 1996年 / 30卷 / 10期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study is made of the photoluminescence of arrays of vertically coupled, stressed InAs quantum dots created in situ by molecular beam epitaxy in a GaAs (100) matrix. The locations of the photoluminescence lines of the quantum dots and InAs wetting layer are studied as functions of the number of InAs deposition cycles and the average thickness of the GaAs spacer. The observed dependence is described in terms of a phenomenological model in which the shift in the photoluminescence band is assumed to be caused by a change in the ground state energy occurring as a result of a weak interaction among carriers localized in tunnel-coupled quantum dots. (C) 1996 American Institute of Physics.
引用
收藏
页码：953 / 958
页数：6
相关论文
共 50 条
  • [21] Photoluminescence of InAs quantum dots grown on GaAs surface
    Wang, JZ
    Yang, Z
    Yang, CL
    Wang, ZG
    APPLIED PHYSICS LETTERS, 2000, 77 (18) : 2837 - 2839
  • [22] Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots
    Neudert, K.
    Trojanek, F.
    Kuldova, K.
    Oswald, J.
    Hospodkova, A.
    Maly, P.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 2009, 6 (04): : 853 - +
  • [23] Photoluminescence pressure coefficients of InAs/GaAs quantum dots
    Luo, JW
    Li, SS
    Xia, JB
    Wang, LW
    PHYSICAL REVIEW B, 2005, 71 (24)
  • [24] Photoluminescence of ultra small InAs/GaAs quantum dots
    Lin, YG
    Wu, CH
    Tyan, SL
    Lin, SD
    Lee, CP
    MODERN PHYSICS LETTERS B, 2005, 19 (18): : 907 - 917
  • [25] Photoluminescence and electromodulation study of InAs/GaAs quantum dots
    Kim, SS
    Cheong, H
    Song, JD
    Park, YM
    Shin, JC
    Park, YJ
    Choi, WJ
    Lee, JI
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (01) : 145 - 148
  • [26] Estimation of the effective electron-capture cross section in the emission processes from arrays of vertically coupled InAs quantum dots in the n-GaAs matrix
    Baklanov, A.
    Gutkin, A.
    Brunkov, P.
    2ND INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SPBOPEN2015), 2015, 643
  • [27] Long wavelength photoluminescence emission from InAs quantum dots embedded in GaAs matrix
    Saravanan, S
    Shimizu, H
    PHOTONICS: DESIGN, TECHNOLOGY, AND PACKAGING II, 2006, 6038
  • [28] Dissipative Tunneling of Electrons in Vertically Coupled Double Asymmetric InAs/GaAs(001) Quantum Dots
    M. B. Semenov
    V. D. Krevchik
    D. O. Filatov
    A. V. Shorokhov
    A. P. Shkurinov
    I. A. Ozheredov
    P. V. Krevchik
    Y. H. Wang
    T. R. Li
    A. K. Malik
    M. O. Marychev
    N. V. Baidus
    I. M. Semenov
    Technical Physics, 2022, 67 : 115 - 125
  • [29] Stark effect in single and vertically coupled InAs/GaAs self-assembled quantum dots
    Sobolev, MM
    Ustinov, VM
    Cirlin, GE
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 1103 - 1107
  • [30] Dissipative Tunneling of Electrons in Vertically Coupled Double Asymmetric InAs/GaAs(001) Quantum Dots
    Semenov, M. B.
    Krevchik, V. D.
    Filatov, D. O.
    Shorokhov, A., V
    Shkurinov, A. P.
    Ozheredov, I. A.
    Krevchik, P., V
    Wang, Y. H.
    Li, T. R.
    Malik, A. K.
    Marychev, M. O.
    Baidus, N., V
    Semenov, I. M.
    TECHNICAL PHYSICS, 2022, 67 (02) : 115 - 125
12345