Controlling the geometrical orientation of hot-wire chemical vapor process grown silicon nanowires

被引：4

作者：

Soam, Ankur ^{[1
,2
]}

Meshram, Nagsen ^{[1
]}

Arya, Nitin ^{[1
]}

Kumbhar, Alka ^{[1
]}

Dusane, Rajiv ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Met Engn & Mat Sci, Semicond Thin Films & Plasma Proc Lab, Bombay 400076, Maharashtra, India

[2] Siksha O Anusandhan Univ, Ctr Nanosci & Nanotechnol, Nanomat & Device Fabricat Lab, Bhubaneswar 751030, Odisha, India

来源：

THIN SOLID FILMS | 2017年 / 635卷

关键词：

Silicon nanowires; Sn catalyst; Vapor-liquid-solid mechanism; Hot-wire chemical vapor deposition; Geometrical orientation; KINKING; DEPOSITION; PRESSURE; CATALYST;

D O I：

10.1016/j.tsf.2016.12.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, the effect of chamber pressure on the morphology of hot wire chemical vapor processed silicon nanowires (SiNWs) using Sn as catalyst has been studied. It is observed that their geometrical orientation can be controlled as per requirement by adjusting the growth pressure. SiNWs synthesized at low pressure of 0.67 Pa grow preferentially perpendicular to the substrate. If the pressure is increased to 2.7 Pa, SiNWs become tilted to the substrate and have bending type structure with random distribution. Further increase in the chamber pressure to 4 Pa very few wires are seen to grow and at 5.3 Pa no-growth of SiNWs is observed. Transmission electron microscopy study shows that the straight SiNWs have crystalline structure whereas the bent ones show polycrystalline structure. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：58 / 62

页数：5

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