Structure and Switching Behavior Optimization of fast 4.5 kV Press-Pack Diodes

被引：0

作者：

Zhi, Zheng ^{[1
]}

Kowalsky, Jens ^{[1
]}

Lutz, Josef ^{[1
]}

Kellner, Uwe ^{[2
]}

Drilling, Christof ^{[2
]}

Weidner, Peter ^{[2
]}

机构：

[1] Tech Univ Chemnitz, Chair Power Elect & EMC, Chemnitz, Germany

[2] Infineon Technol Bipolar GmbH & Co KG, Warstein, Germany

来源：

2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE) | 2019年

关键词：

Field stop; Ion implantation; Carrier lifetime; Soft switching; Fast recovery diode; Device simulation;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

There is an increasing demand for high power high voltage diodes. The requirements are for low losses and rugged performance during even under the fastest switching conditions. This paper describes a detailed investigation to optimize the reverse recovery behavior of 4.5 kV Press-Pack diodes under different current commutation slopes up to 15 kA/mu s. Controlled axial lifetime and appropriate field stop (FS) profiles were investigated in order to obtain soft recovery behavior at 10% to 200% of rated current. Phosphorus diffusion and proton implantation were used in order to discover an appropriate process for manufacturing the field stop structure. In addition, the contributions of varied lifetime adjustments at the anode side of the diode have been analyzed and explained using measurements and simulations.

引用

页数：10

共 38 条

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