Structure and Switching Behavior Optimization of fast 4.5 kV Press-Pack Diodes

被引：0

作者：

Zhi, Zheng ^{[1
]}

Kowalsky, Jens ^{[1
]}

Lutz, Josef ^{[1
]}

Kellner, Uwe ^{[2
]}

Drilling, Christof ^{[2
]}

Weidner, Peter ^{[2
]}

机构：

[1] Tech Univ Chemnitz, Chair Power Elect & EMC, Chemnitz, Germany

[2] Infineon Technol Bipolar GmbH & Co KG, Warstein, Germany

来源：

2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE) | 2019年

关键词：

Field stop; Ion implantation; Carrier lifetime; Soft switching; Fast recovery diode; Device simulation;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

There is an increasing demand for high power high voltage diodes. The requirements are for low losses and rugged performance during even under the fastest switching conditions. This paper describes a detailed investigation to optimize the reverse recovery behavior of 4.5 kV Press-Pack diodes under different current commutation slopes up to 15 kA/mu s. Controlled axial lifetime and appropriate field stop (FS) profiles were investigated in order to obtain soft recovery behavior at 10% to 200% of rated current. Phosphorus diffusion and proton implantation were used in order to discover an appropriate process for manufacturing the field stop structure. In addition, the contributions of varied lifetime adjustments at the anode side of the diode have been analyzed and explained using measurements and simulations.

引用

页数：10

共 38 条

[21] Thermal Contact Resistance Optimization of Press-Pack IGBT Device Based on Liquid Metal Thermal Interface Material
Wang, Xiao
Li, Hui
Yao, Ran
Lai, Wei
Liu, Renkuan
Yu, Renze
Chen, Xianping
Li, Jinyuan
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (05) : 5411 - 5421
[22] Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT
田晓丽
陆江
滕渊
张文亮
卢烁今
朱阳军
Journal of Semiconductors, 2015, (03) : 89 - 91
[23] Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT
田晓丽
陆江
滕渊
张文亮
卢烁今
朱阳军
Journal of Semiconductors, 2015, 36 (03) : 89 - 91
[24] Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT
Tian Xiaoli
Lu Jiang
Teng Yuan
Zhang Wenliang
Lu Shuojin
Zhu Yangjun
JOURNAL OF SEMICONDUCTORS, 2015, 36 (03)
[25] Development of a 10kV Solid-State DC Circuit Breaker Based on Press-Pack IGBT for VSC-HVDC System
Feng, Lei
Gou, Ruifeng
Zhuo, Fang
Yang, Xiaoping
Zhang, Fan
2016 IEEE 8TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC-ECCE ASIA), 2016,
[26] Electric Field Transient Characteristics of High Voltage and High Power Compliant Press-Pack IGBT Device Package Insulation Structure
Sijia L.
Teng W.
Xuebao L.
Liang W.
Xiang C.
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, 2023, 38 (23): : 6253 - 6265
[27] Comparative Analysis of Large-capacity Fully-controlled Press-pack IGBT and IGCT: Principle, Structure, Characteristics and Application
Zhou W.
Zeng R.
Zhao B.
Chen Z.
Liu J.
Bai R.
Wu J.
Yu Z.
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2022, 42 (08): : 2940 - 2956
[28] Turn-off Behavior of 4.5 kV Asymmetric IGCTs under Zero Voltage Switching Conditions
Lenke, R.
van Hoek, H.
Taraborrelli, S.
De Doncker, R. W.
San-Sebastian, J.
Etxeberria-Otadui, I.
PROCEEDINGS OF THE 2011-14TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE 2011), 2011,
[29] Study on Accurate Thermal Modeling of Press-pack IGBT Module with Asymmetric Double-side Cooling Structure based on Structure Function Curve by Orthogonal Experimental Design
Dou, Zechun
Dong, Guozhong
Liu, Guoyou
Luo, Haihui
Wang, Yangang
Wu, Yudong
Zhou, Zhixiong
2019 IEEE 13TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (PEDS), 2019,
[30] 4.5 kV-fast-diodes with expanded SOA using a multi-energy proton lifetime control technique
Humbel, O.
Galster, N.
Bauer, F.
Fichtner, W.
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 1999, : 121 - 124

← 1 2 3 4 →