Testing field and annealing temperature dependence of leakage properties in Bi3.25La0.75Ti3O12 thin films

被引：4
|
作者：
Wu, Xiumei [1 ]
Dong, Shuai [1 ]
Zhai, Ya [1 ]
Xu, Mingxiang [1 ]
Kan, Yi [2 ]
机构：
[1] Southeast Univ, Dept Phys, Nanjing 211189, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 07期
基金：
美国国家科学基金会;
关键词：
Ferroelectric properties; Thin films; Annealing temperature; Leakage current; Metalorganic deposition; Surface morphology; CHARGE-LIMITED CURRENTS; ORIENTATION; MEMORIES;
D O I：
10.1016/j.tsf.2010.11.021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ferroelectric Bi3.25La0.75Ti3O12 thin films annealed at different temperatures were prepared on Pt/Ti/SiO2/Si substrates by metalorganic decomposition method. The leakage current behavior and the current conduction mechanism were investigated. For all films, the leakage current density - electric field (J - E) characteristic is confined within a "triangle" in the log (J)-log (E) plane bounded by three limiting curves: Ohm's law (J proportional to E), trap-filled-limit (J proportional to E-a, a > 1), and Child's law (J proportional to E-2). At high field region, Bi3.25La0.75Ti3O12 thin films with grains of rod-like show higher leakage current, while films with grains of spherical- or planar-like exhibit lower leakage current.(c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：2376 / 2380
页数：5
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