Effect of Annealing Temperature on the Properties of Sputtered Bi3.25La0.75Ti3O12 Thin Films

Bi3.25La0.75Ti3O12(BLT) thin films were prepared on the Pt(150 nm)/Ti(50 nm)/SiO2/Si substrate using the rf magnetron sputtering method. The BLT thin films were annealed at temperatures ranging from 600 degrees C to 750 degrees C using the rapid thermal annealing. The structure and surface morphology of the thin films were characterized by x-ray diffraction and field emission scanning electron microscopy. The hysteresis loop of the BLT thin films showed that the remanent polarization (2Pr) of the film annealed at 700 degrees C was 10.92 mu C/cm(2). The fatigue characteristic of the BLT thin film annealed at 700 degrees C was shown change polarization up to 1.2 x 10(9) switching cycles. We confirmed the excellent remnant polarization (Pr) and fatigue properties compared with other fabrication methods and suggested a good method for BLT thin films fabrications.