Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures

被引：38

作者：

Hasegawa, H ^{[1
]}

Sato, T

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan

来源：

ELECTROCHIMICA ACTA | 2005年 / 50卷 / 15期

关键词：

III-V semiconductors; anodic etching; nanopore; electrodeposition; Schottky barrier;

D O I：

10.1016/j.electacta.2004.11.066

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper reviews recent efforts by authors' group to utilize electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures. Topics include precise photo-anodic and pulsed anodic etching of InP, formation of arrays of < 001 >-oriented straight nanopores in n-type (001)InP by anodization and their possible applications and macroscopic and nanometer-scale metal contact formation on GaAs, InP and GaN by a pulsed in situ electrochemical process, which remarkably reduces Fermi level pinning. All the results indicate that electrochemical processes can achieve unique and important results, which the conventional semiconductor technology cannot realize, anticipating their increased importance in future semiconductor nanotechnology and nanoelectronics. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：3015 / 3027

页数：13

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