Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology

被引：0
|
作者：
Amendola, G. [1 ]
Boccia, L. [1 ]
Centurelli, F. [2 ]
Ciccognani, W. [3 ]
Limiti, E. [3 ]
Mustacchio, C. [1 ]
Tommasino, P. [2 ]
Trifiletti, A. [2 ]
机构：
[1] Univ Calabria, Dipartimento Ingn Informat Modellist Elettron & S, Arcavacata Di Rende, Italy
[2] Univ Roma La Sapienza, Informat Engn Elect & Telecommun Dept, Rome, Italy
[3] Univ Roma Tor Vergata, Elect Engn Dept, Rome, Italy
来源：
PROCEEDINGS OF THE 2022 21ST MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS 2022) | 2022年
关键词：
E-band; BiCMOS integrated circuits; SiGe; Backhaul; Variable gain amphfier; SIGE; RECEIVER;
D O I：
10.1109/MMS55062.2022.9825549
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E-Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary characterization by standard 2-port Network Analyzer. Amplifiers have been prototyped in a SiGe BiCMOS commercial technology, and exhibit about 22 dB of gain control range. After balun de-embedding, more than 10 dB of maximum gain has been also demonstrated for both amplifiers.
引用
收藏
页码：481 / 484
页数：4
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