Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology

被引：0
|
作者：
Amendola, G. [1 ]
Boccia, L. [1 ]
Centurelli, F. [2 ]
Ciccognani, W. [3 ]
Limiti, E. [3 ]
Mustacchio, C. [1 ]
Tommasino, P. [2 ]
Trifiletti, A. [2 ]
机构：
[1] Univ Calabria, Dipartimento Ingn Informat Modellist Elettron & S, Arcavacata Di Rende, Italy
[2] Univ Roma La Sapienza, Informat Engn Elect & Telecommun Dept, Rome, Italy
[3] Univ Roma Tor Vergata, Elect Engn Dept, Rome, Italy
来源：
PROCEEDINGS OF THE 2022 21ST MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS 2022) | 2022年
关键词：
E-band; BiCMOS integrated circuits; SiGe; Backhaul; Variable gain amphfier; SIGE; RECEIVER;
D O I：
10.1109/MMS55062.2022.9825549
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E-Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary characterization by standard 2-port Network Analyzer. Amplifiers have been prototyped in a SiGe BiCMOS commercial technology, and exhibit about 22 dB of gain control range. After balun de-embedding, more than 10 dB of maximum gain has been also demonstrated for both amplifiers.
引用
收藏
页码：481 / 484
页数：4
相关论文
共 50 条
  • [21] Design, optimization, and analysis of thulium-doped optical fiber amplifiers for E-band communication
    Sarma, Krishna
    Khan, Mohd Mansoor
    OPTICAL ENGINEERING, 2024, 63 (05) : 58102
  • [22] A 60-GHz Low-Noise Variable-Gain Amplifier in a 130-nm BiCMOS Technology for Sixport Applications
    Voelkel, Matthias
    Dietz, Marco
    Hagelauer, Amelie
    Weigel, Robert
    Kissinger, Dietmar
    2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2017,
  • [23] A Low-Power 60GHz Receiver Front-End with a Variable-Gain LNA in SiGe BiCMOS Technology
    Sun, Yaoming
    Scheytt, Christoph J.
    2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2010, : 192 - 195
  • [24] DESIGN CONSIDERATIONS OF HIGH-DYNAMIC-RANGE WIDE-BAND AMPLIFIERS IN BICMOS TECHNOLOGY
    CHANG, ZY
    SANSEN, WMC
    STEYAERT, MSJ
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1991, 26 (11) : 1681 - 1688
  • [25] High-Performance E-Band Transceiver Chipset for Point-to-Point Communication in SiGe BiCMOS Technology
    Levinger, Run
    Ben Yishay, Roee
    Katz, Oded
    Sheinman, Benny
    Mazor, Nadav
    Carmon, Roi
    Elad, Danny
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (04) : 1078 - 1087
  • [26] Cell-Based Variable-Gain Amplifiers With Accurate dB-Linear Characteristic in 0.18 μm CMOS Technology
    Liu, Hang
    Zhu, Xi
    Boon, Chirn Chye
    He, Xiaofeng
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (02) : 586 - 596
  • [27] High-Efficiency SiGe-BiCMOS E-Band Power Amplifiers Exploiting Current Clamping in the Common-Base Stage
    Rahimi, Elham
    Zhao, Junlei
    Svelto, Francesco
    Mazzanti, Andrea
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2019, 54 (08) : 2175 - 2185
  • [28] Systematic Characterization of Silicon IMPATT Diode for Monolithic E-band Amplifier Design
    Zhang, Wogong
    Oehme, Michael
    Kostecki, Konrad
    Matthies, Klaus
    Stefani, Viktor
    Kasper, Erich
    Schulze, Joerg
    2015 GERMAN MICROWAVE CONFERENCE, 2015, : 135 - 138
  • [29] LINEAR-IN-DECIBEL VARIABLE GAIN AMPLIFIER DESIGN IN 0.18μm SIGE BICMOS TECHNOLOGY
    Lu, Muting
    Kumar, Thangarasu Bharatha
    Yu, Xiaopeng
    Yeo, Kiat Seng
    2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, : 116 - 119
  • [30] A 1-12-GHz variable-gain low-noise amplifier MMIC using 0.25-μm SiGe BiCMOS technology
    Chang, Woojin
    Lee, Sang-Heung
    Mun, Jae-Kyoung
    Nam, Eunsoo
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2012, 54 (08) : 1935 - 1937
12345