Electro-Thermal Investigation of SMT Resistors for Thermal-Electrical Logic Circuits by Simulation

被引:2
|
作者
Pohl, Laszlo [1 ]
Darwish, Mahmoud [1 ]
Mizsei, Janos [1 ]
机构
[1] Budapest Univ Technol & Econ BME, Budapest, Hungary
关键词
TRANSITION;
D O I
10.1109/therminic.2019.8923402
中图分类号
O414.1 [热力学];
学科分类号
摘要
Thermal-electrical logic circuits can be a possible alternative to CMOS technology. The basic element of these circuits is the vanadium dioxide resistor. Currently, only macroscopic models exist for the operation of VO2 resistors. The development of a submicron model requires the design, production and measurement of submicron-sized samples. In this paper, high-resolution electro-thermal VO2 resistor simulations are performed using a macroscopic material model in the range of 200 mu m to 50 nm resistor width and 20 mu m to 50 nm length with 50 nm layer thickness. These results in the submicron range can only be considered as estimates, but they can be used to determine the size of the samples required for submicron modelling.
引用
收藏
页数:4
相关论文
共 50 条
  • [11] Extensive Electro-Thermal Simulation Methodology for Automotive High Power Circuits
    Bajenaru, Adrian-Gabriel
    Ballarin, Fabio
    Boianceanu, Cristian Mihai
    Brezeanu, Gheorghe
    2014 10TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME 2014), 2014,
  • [12] A critical review of thermal models for electro-thermal simulation
    d'Alessandro, V
    Rinaldi, N
    SOLID-STATE ELECTRONICS, 2002, 46 (04) : 487 - 496
  • [13] COUPLED ELECTRO-THERMAL SIMULATION OF MOSFETs
    Ni, Chunjian
    Aksamija, Zlatan
    Murthy, Jayathi Y.
    Ravaioli, Umberto
    IPACK 2009: PROCEEDINGS OF THE ASME INTERPACK CONFERENCE 2009, VOL 1, 2010, : 161 - 173
  • [14] Electro-thermal simulation with the SISSI package
    Székely, V
    Páhi, A
    Poppe, A
    Rencz, M
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 1999, 21 (01) : 21 - 31
  • [15] Electro-Thermal Simulation with the SISSI Package
    V. Sze´kely
    A. Pa´hi
    A. Poppe
    M. Rencz
    Analog Integrated Circuits and Signal Processing, 1999, 21 : 21 - 31
  • [16] Coupled electro-thermal simulation of MOSFETs
    Ni, Chunjian
    Aksamija, Zlatan
    Murthy, Jayathi Y.
    Ravaioli, Umberto
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2012, 11 (01) : 93 - 105
  • [17] Electro-thermal simulation of MEMS elements
    Rencz, M
    Székely, V
    Poppe, A
    Courtois, B
    DTIP 2003: DESIGN, TEST, INTEGRATION AND PACKAGING OF MEMS/MOEMS 2003, 2003, : 15 - 20
  • [18] Coupled electro-thermal simulation of MOSFETs
    Chunjian Ni
    Zlatan Aksamija
    Jayathi Y. Murthy
    Umberto Ravaioli
    Journal of Computational Electronics, 2012, 11 : 93 - 105
  • [19] Compact Modeling and Electro-thermal Simulation of Hot Carriers Effect in Analog Circuits
    Garci, Maroua
    Kammerer, Jean-Baptiste
    Hebrard, Luc
    2014 IEEE 12TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2014, : 125 - 128
  • [20] Model for electro-thermal aging of electrical insulation
    Laghari, J.R., 1600, (09): : 1 - 2