Electro-Thermal Investigation of SMT Resistors for Thermal-Electrical Logic Circuits by Simulation

被引:2
|
作者
Pohl, Laszlo [1 ]
Darwish, Mahmoud [1 ]
Mizsei, Janos [1 ]
机构
[1] Budapest Univ Technol & Econ BME, Budapest, Hungary
关键词
TRANSITION;
D O I
10.1109/therminic.2019.8923402
中图分类号
O414.1 [热力学];
学科分类号
摘要
Thermal-electrical logic circuits can be a possible alternative to CMOS technology. The basic element of these circuits is the vanadium dioxide resistor. Currently, only macroscopic models exist for the operation of VO2 resistors. The development of a submicron model requires the design, production and measurement of submicron-sized samples. In this paper, high-resolution electro-thermal VO2 resistor simulations are performed using a macroscopic material model in the range of 200 mu m to 50 nm resistor width and 20 mu m to 50 nm length with 50 nm layer thickness. These results in the submicron range can only be considered as estimates, but they can be used to determine the size of the samples required for submicron modelling.
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页数:4
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