Vapor-phase growth and characterization of luminescent silicon layers

被引：0

作者：

de Vasconcelos, EA ^{[1
]}

da Silva, JB ^{[1
]}

dos Santos, BECA ^{[1
]}

da Silva, EF ^{[1
]}

de Azevedo, WM ^{[1
]}

Freire, JAK ^{[1
]}

Soares, JANT ^{[1
]}

Leite, JR ^{[1
]}

机构：

[1] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We discuss the vapor-phase technique for porous silicon formation and the structural, optical and electrical properties of the layers with emphasis on the statistical and fractal analysis of Atomic Force Microscopy (AFM) images. First-order and second order parameters of different AFM images of vapor-phase grown layers were calculated. We found a trend towards slightly lower roughness exponents for vapor-phase samples, possibly related with improved structural reproducibility. The current-voltage characteristics show an exponential dependence with voltage, followed by a power-law relationship, typical of space charge limited currents in high resistivity materials.

引用

页码：837 / 838

页数：2

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