Orthotropic Stress Field Induced by TSV and Its Impact on Device Performance

被引：0

作者：

Hsieh, C. C. ^{[1
]}

Teng, H. A. ^{[1
]}

Jeng, S. P. ^{[1
]}

Jan, S. B. ^{[1
]}

Chen, M. F. ^{[1
]}

Chang, J. H. ^{[1
]}

Chang, C. H. ^{[1
]}

Yang, K. F. ^{[1
]}

Lin, Y. C. ^{[1
]}

Wu, T. J. ^{[1
]}

Chiou, W. C. ^{[1
]}

Hou, S. Y. ^{[1
]}

Yu, Doug C. H. ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, Res & Dev, Hsinchu, Taiwan

来源：

2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM) | 2011年

关键词：

RAMAN-SPECTROSCOPY; SILICON; GAP;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An orthotropic stress field was observed in the vicinity of the Cu-filled TSV on nominal (100) silicon substrate from both mu Raman measured data and validated FEM result. The orthotropic elastic behavior of silicon in the (100) plane is believed to be the reason. The FEM model was further validated by the comparison with the measured electrical data, and used to predict the device performance shift under the influence of the TSV-induced stress. The performance shift pattern also showed an orthotropic pattern. This finding has profound implication on 3D silicon stacking design rule and system integration.

引用

页数：3

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