Orthotropic Stress Field Induced by TSV and Its Impact on Device Performance

被引：0

作者：

Hsieh, C. C. ^{[1
]}

Teng, H. A. ^{[1
]}

Jeng, S. P. ^{[1
]}

Jan, S. B. ^{[1
]}

Chen, M. F. ^{[1
]}

Chang, J. H. ^{[1
]}

Chang, C. H. ^{[1
]}

Yang, K. F. ^{[1
]}

Lin, Y. C. ^{[1
]}

Wu, T. J. ^{[1
]}

Chiou, W. C. ^{[1
]}

Hou, S. Y. ^{[1
]}

Yu, Doug C. H. ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, Res & Dev, Hsinchu, Taiwan

来源：

2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM) | 2011年

关键词：

RAMAN-SPECTROSCOPY; SILICON; GAP;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An orthotropic stress field was observed in the vicinity of the Cu-filled TSV on nominal (100) silicon substrate from both mu Raman measured data and validated FEM result. The orthotropic elastic behavior of silicon in the (100) plane is believed to be the reason. The FEM model was further validated by the comparison with the measured electrical data, and used to predict the device performance shift under the influence of the TSV-induced stress. The performance shift pattern also showed an orthotropic pattern. This finding has profound implication on 3D silicon stacking design rule and system integration.

引用

页数：3

共 50 条

[21] Electric stress-induced degradation of thin oxide layers and its impact on device reliability
Degraeve, R
Kaczer, B
Roussel, P
Groeseneken, G
SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2, 2002, 2002 (02): : 475 - 488
[22] In-situ stress field inversion and its impact on mining-induced seismicity
Cheng, Xianggang
Qiao, Wei
Dou, Linming
He, Hu
Ju, Wei
Zhang, Jinkui
Song, Shikang
Cui, Heng
Fang, Hengzhi
GEOMATICS NATURAL HAZARDS & RISK, 2023, 14 (01) : 176 - 195
[23] STRESS-FIELD IN ORTHOTROPIC ACCELERATING DISKS
GENTA, G
GOLA, M
GUGLIOTTA, A
JOURNAL OF APPLIED MECHANICS-TRANSACTIONS OF THE ASME, 1982, 49 (03): : 658 - 661
[24] General Stress Field for Cracked Orthotropic Plate
Jia, Purong
Suo, Yongyong
Jia, Cheng
6TH ANNUAL INTERNATIONAL WORKSHOP ON MATERIALS SCIENCE AND ENGINEERING, 2020, 1622
[25] Statistical device variability and its impact on yield and performance
Asenov, Asen
13TH IEEE INTERNATIONAL ON-LINE TESTING SYMPOSIUM PROCEEDINGS, 2007, : 253 - 253
[26] TSV Stress-Aware Performance and Reliability Analysis
Ali, Muhammad
Ahmed, Mohammad A.
Chrzanowska-Jeske, Malgorzata
2012 19TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2012, : 737 - 740
[27] Investigation on the defect induced thermal mechanical stress for TSV
Li, Fei
Xiao, Chengdi
He, Hu
Li, Junhui
Zhu, Wenhui
2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2016, : 713 - 715
[28] Effect of Gate-Line-End-Induced Stress and Its Impact on Device's Characteristics in FinFETs
Yang, Po-Yu
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (07) : 910 - 912
[29] TSV Impact on Circuit Performance and Recommended Design Methodologies
Salah, Khaled
El Rouby, Alaa
Ragai, Hani
Ismail, Yehea
2012 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (ICM), 2012,
[30] Fatigue Performance Evaluation for an Orthotropic Steel Bridge Deck Based on Field Hotspot Stress Measurements
Chen, Bin
Chen, Zengshun
Xie, Xu
Ye, Xiaowei
JOURNAL OF TESTING AND EVALUATION, 2020, 48 (02) : 1175 - 1187

← 1 2 3 4 5 →