Carrier Transport in Graphene Field-Effect Transistors on Gated Polar Nitride Substrates

被引:5
|
作者
Balasubramanian, Krishna [1 ,2 ]
Chandrasekar, Hareesh [2 ,3 ]
Raghavan, Srinivasan [2 ]
机构
[1] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
[2] Indian Inst Sci, Ctr Nanosci & Engn, Bangalore 560012, Karnataka, India
[3] Ohio State Univ, Dept Elect & Comp Engn, 2015 Neil Ave, Columbus, OH 43210 USA
关键词
aluminum nitride; graphene; impurity scattering; mobility; optical phonon;
D O I
10.1002/pssa.201900949
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Large-area, complementary metal-oxide semiconductor-compatible substrates for high-performance graphene-based electronic devices are desired and AlN is a promising candidate with high dielectric constant and low surface phonon densities. An informed choice of substrate needs to consider the simultaneous effects of the two major substrate-induced scattering mechanisms-remote impurity scattering and remote interfacial phonon scattering. Herein, the effects of such an interplay with fundamentally different electron and hole transport characteristics in chemical vapor deposition (CVD)-grown monolayer graphene field-effect transistors (FETs) on AlN thin films are demonstrated, due to the polar and piezoelectric nature of AlN. Temperature-dependent measurements not only reveal a cross-over in mobility, with graphene FETs on AlN having larger mobilities than SiO2 at higher temperatures, but also an asymmetry between the cross-over temperature for the electron and hole branches. Theoretical transport model using appropriate densities of charged impurities in both cases is shown to match well with the experimental results. These results highlight the role of the actual charge configurations within thin-film dielectric substrates on carrier transport in practically realizable graphene FETs, which can be further generalized to other 2D material systems.
引用
收藏
页数:7
相关论文
共 50 条
  • [31] Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates
    Ohno, Yasuhide
    Kanai, Yasushi
    Mori, Yuki
    Nagase, Masao
    Matsumoto, Kazuhiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (06)
  • [32] Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers
    Moon, J. S.
    Curtis, D.
    Bui, S.
    Marshall, T.
    Wheeler, D.
    Valles, I.
    Kim, S.
    Wang, E.
    Weng, X.
    Fanton, M.
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) : 1193 - 1195
  • [33] Transport behaviors in graphene field effect transistors on boron nitride substrate
    Alarcon, A.
    Nguyen, V. Hung
    Berrada, S.
    Querlioz, D.
    Saint-Martin, J.
    Bournel, A.
    Dollfus, P.
    2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2012,
  • [34] Linearity of graphene field-effect transistors
    Jenkins, K. A.
    Farmer, D. B.
    Han, S. -J.
    Dimitrakopoulos, C.
    Oida, S.
    Valdes-Garcia, A.
    APPLIED PHYSICS LETTERS, 2013, 103 (17)
  • [35] Graphene nanoribbon field-effect transistors
    Thornhill, Stephen
    Wu, Nathanael
    Wang, Z. F.
    Shi, Q. W.
    Chen, Jie
    PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10, 2008, : 169 - +
  • [36] Thermal transport in graphene field-effect transistors with ultrashort channel length
    Ben Aissa, Mohamed Fadhel
    Rezgui, Houssem
    Nasri, Faouzi
    Belmabrouk, Hafedh
    Guizani, AmenAllah
    SUPERLATTICES AND MICROSTRUCTURES, 2019, 128 : 265 - 273
  • [37] A model of carrier density and drain current for monolayer graphene field-effect transistors
    Zhuang, Feng
    Deng, Wanling
    Ma, Xiaoyu
    Huang, Junkai
    AIP ADVANCES, 2019, 9 (02)
  • [38] Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates
    Hwang, Wan Sik
    Zhao, Pei
    Tahy, Kristof
    Nyakiti, Luke O.
    Wheeler, Virginia D.
    Myers-Ward, Rachael L.
    Eddy, Charles R., Jr.
    Gaskill, D. Kurt
    Robinson, Joshua A.
    Haensch, Wilfried
    Xing, Huili
    Seabaugh, Alan
    Jena, Debdeep
    APL MATERIALS, 2015, 3 (01):
  • [39] A Current-Voltage Model for Graphene Electrolyte-Gated Field-Effect Transistors
    Mackin, Charles
    Hess, Lucas H.
    Hsu, Allen
    Song, Yi
    Kong, Jing
    Garrido, Jose Antonio
    Palacios, Tomas
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (12) : 3971 - 3977
  • [40] Multiplexed neural sensor array of graphene solution-gated field-effect transistors
    Schaefer, Nathan
    Garcia-Cortadella, Ramon
    Martinez-Aguilar, Javier
    Schwesig, Gerrit
    Illa, Xavi
    Lara, Ana
    Santiago, Sara
    Hebert, Clement
    Guirado, Gonzalo
    Villa, Rosa
    Sirota, Anton
    Guimera-Brunet, Anton
    Garrido, Jose A.
    2D MATERIALS, 2020, 7 (02):