Thermal transport in graphene field-effect transistors with ultrashort channel length

Thermal management has been widely studied to enhance the reliability of future organic nanoelectronics. Organic Field-Effect Transistors (OFETs) represent a novel technology for future nanomanufacturing of electronic devices. However, enhancing the thermal stability of transistors become a major challenge for next-generation of electronics devices. In this work, we report the thermal transport of graphene FETs (GFETs) with ultrashort channel length. In the first step, we investigate the ability of our model to characterize the heat transport in nanotransistors. To clarify the nature of the phonon-wall collisions along the channel, we have considered the effect of the temperature jump boundary condition in the oxide-graphene interface. In addition, our proposed effective thermal conductivity (ETC) model agrees with experimental results. Furthermore, we have found that graphene FETs are more thermally stable than the classical transistors based on Silicon MOSFETs.