Parallel syntheses and thermoelectric properties of Ce-doped SrTiO3 thin films
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作者:
Yamada, Y. F.
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Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, JapanTohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
Yamada, Y. F.
[1
]
Ohtomo, A.
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Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, JapanTohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
Ohtomo, A.
[1
,2
]
Kawasaki, M.
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Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, JapanTohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
Kawasaki, M.
[1
,3
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机构:
[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
Thermoelectric properties of single crystalline Ce(x)Sr(1-x)TiO(3) films (0 <= x <= 0.5) have been studied by using combinatorial pulsed-laser deposition. Temperature gradient method was used for identifying an optimum growth temperature for SrTiO(3) homoepitaxial growth, at which both oxygen stoichiometry and persisting layer-by-layer growth mode could be accomplished. Electrical conductivity (sigma) and Seebeck coefficient (S) were measured at room temperature for the composition-spread films grown at the optimized temperature and found to be considerably higher than those reported for bulk poly-crystalline compounds. Hall measurement revealed that carrier density linearly increased with increasing x, suggesting that a trivalent Ce ions substituted divalent Sr ions to supply electrons. A maximum power factor (S(2)sigma) was obtained for the x = 0.2 film, being 7 and 14 mu W/K(2) cm at 300 and 900 K, respectively. (C) 2007 Elsevier B.V. All rights reserved.
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Ajou Univ, Dept Energy Syst Res, Suwon 16499, South KoreaAjou Univ, Dept Energy Syst Res, Suwon 16499, South Korea
Kim, Jinseo
Le Thai Duy
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Ajou Univ, Dept Mat Sci & Engn, Suwon, South KoreaAjou Univ, Dept Energy Syst Res, Suwon 16499, South Korea
Le Thai Duy
Lee, Sang Yeon
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Ajou Univ, Dept Energy Syst Res, Suwon 16499, South KoreaAjou Univ, Dept Energy Syst Res, Suwon 16499, South Korea
Lee, Sang Yeon
Ko, Minhwan
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Ajou Univ, Dept Energy Syst Res, Suwon 16499, South KoreaAjou Univ, Dept Energy Syst Res, Suwon 16499, South Korea
Ko, Minhwan
Seo, Hyungtak
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Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea
Ajou Univ, Dept Mat Sci & Engn, Suwon, South KoreaAjou Univ, Dept Energy Syst Res, Suwon 16499, South Korea
机构:
Inst for Basic Sci Korea, Ctr Correlated Electron Syst, Seoul 151742, South Korea
Seoul Natl Univ, Dept Phys & Astron, Seoul 151742, South KoreaSungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea
Yoo, Hyang Keun
Ohta, Hiromichi
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Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0010020, JapanSungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea
机构:
Taiyo Yuden Co Ltd, Dev Planning Div, Gunma 3708522, JapanTaiyo Yuden Co Ltd, Dev Planning Div, Gunma 3708522, Japan
Hara, Toru
Ishiguro, Takashi
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Taiyo Yuden Co Ltd, Dev Planning Div, Gunma 3708522, JapanTaiyo Yuden Co Ltd, Dev Planning Div, Gunma 3708522, Japan
Ishiguro, Takashi
Wakiya, Naoki
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Shizuoka Univ, Fac Engn, Dept Mat Sci, Naka Ku, Hamamatsu, Shizuoka 4328561, JapanTaiyo Yuden Co Ltd, Dev Planning Div, Gunma 3708522, Japan
Wakiya, Naoki
Shinozaki, Kazuo
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Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528550, JapanTaiyo Yuden Co Ltd, Dev Planning Div, Gunma 3708522, Japan