On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGeHBTs

被引：11
|
作者：
Shi, Y [1 ]
Niu, GF
Cressler, JD
Harame, DL
机构：
[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] IBM Corp, Microelect, Essex Jct, VT 05452 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 05期
基金：
美国国家科学基金会;
关键词：
band-gap narrowing (BGN); device simulation; SiGeHBT;
D O I：
10.1109/TED.2003.813237
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the modeling of healvy-doping induced band-gap narrowing (BGN) in scaled SiGe HBTs featuring high base doping. An inconsistency between simulation results obtained using either Boltzmann or Fermi-Dirac statistics is identified for two widely used commercial device simulators: MEDICI and DESSIS. A new approach to BGN modeling is introduced to correct this problem, and is successfully implemented in DESSIS, enabling consistency in the dc and RF characteristics simulated using either Boltzmann or Fermi-Dirac statistics in the presence of high doping. The impact of the distribution of BGN between the conduction band and the valence band on the simulated cut-off frequency versus bias current density characteristics is also addressed.
引用
收藏
页码：1370 / 1377
页数：8
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