Acceptor deactivation in individual silicon nanowires: From thick to ultrathin

被引：6
|
作者：
Ou, Xin [1 ]
Geyer, Nadine [2 ]
Koegler, Reinhard [1 ]
Werner, Peter [2 ]
Skorupa, Wolfgang [1 ]
机构：
[1] Helmholtz Zentrum Dresden Rossendorf HZDR eV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 25期
关键词：
SPREADING RESISTANCE MICROSCOPY; SI NANOWIRES; DENSITY;
D O I：
10.1063/1.3602924
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the doping behavior in the ultrathin part of individual free standing spicular or conic silicon nanowires (NWs) by measuring the local resistivity of the NWs using scanning spreading resistance microscopy. The NWs are boron-doped and the doping efficiency is found to dramatically decrease as the NW diameter is below 25 nm. Our experimental results reveal the dependence of the acceptor deactivation on the diameter of the NW cross section. The deactivation mechanism is discussed by comparing the experimental data with theoretical models considering the dopant deactivation induced by carrier traps at the Si/SiO2 interface and due to the dielectric mismatch. (C) 2011 American Institute of Physics. [doi:10.1063/1.3602924]
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页数：3
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