Characterization of the HgI2 surface layer after KI etching

被引：14
|
作者：
Ponpon, JP [1 ]
Sieskind, M [1 ]
Amann, M [1 ]
Bentz, A [1 ]
Corbu, C [1 ]
机构：
[1] ENSAIS, LAB MET CORROS & MAT, F-67000 STRASBOURG, FRANCE
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 380卷 / 1-2期
关键词：
D O I：
10.1016/S0168-9002(96)00342-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The formation and properties of the chemical complex which forms on the HgI2 surface during etching in KI have been investigated. The amount of complex, identified as [KHgI3,H2O], remaining on the surface has been determined as a function of the KI concentration, the time of etching in KI and the time of rinse in water. This complex has been found to be very unstable and strongly hygroscopic. Its resistivity after drying is about 10(5) times lower than that of bulk HgI2.
引用
收藏
页码：112 / 116
页数：5
相关论文
共 50 条
  • [41] SIZE QUANTIZATION IN HGI2 COLLOIDS
    PETERSON, MW
    MICIC, O
    NOZIK, AJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C461 - C461
  • [42] RECENT IMPROVEMENTS IN HGI2 DETECTORS
    VANDENBERG, L
    WHITED, RC
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (01) : 395 - 397
  • [43] Formation of the HgI2 crystalline phase in the bulk and on the surface of nanocrystalline matrices
    I. Kh. Akopyan
    M. É. Labzovskaya
    B. V. Novikov
    A. O. Golubok
    V. V. Rozanov
    E. P. Denisov
    T. A. Pavlova
    D. L. Fedorov
    Physics of the Solid State, 2002, 44 : 1388 - 1393
  • [44] PHONON DISPERSION IN RED HGI2
    PREVOT, B
    SCHWAB, C
    DORNER, B
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 88 (01): : 327 - 333
  • [45] THE HGI2 ARRAY DETECTOR DEVELOPMENT PROJECT
    IWANCZYK, JS
    WARBURTON, WK
    HEDMAN, B
    HODGSON, KO
    BEYERLE, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 266 (1-3): : 619 - 627
  • [46] SOME FEATURES OF THE PHOTOELECTRET STATE IN HGI2
    BUGRIENKO, VI
    DEMIDOV, KK
    SOVIET PHYSICS-SOLID STATE, 1962, 4 (06): : 1046 - 1048
  • [47] ELECTRONIC AND OPTICAL-PROPERTIES OF HGI2
    CHANG, YC
    JAMES, RB
    PHYSICAL REVIEW B, 1992, 46 (23): : 15040 - 15045
  • [48] MAGNETIC PROPERTIES OF HGI2 SINGLE CRYSTALS
    STRAKHOV, LP
    SHCHETIN.MP
    KAZENNOV, BA
    SOVIET PHYSICS SOLID STATE,USSR, 1969, 10 (07): : 1770 - &
  • [49] Theoretical study of the dislocation structure in HgI2
    Georgeson, Gary, 1600, (285):
  • [50] HgI2 detector with a virtual Frisch ring
    Bolotnikov, AE
    Baker, J
    DeVito, R
    Sandoval, J
    Szurbart, L
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (01) : 468 - 472
12345