Characterization of the HgI2 surface layer after KI etching

被引：14
|
作者：
Ponpon, JP [1 ]
Sieskind, M [1 ]
Amann, M [1 ]
Bentz, A [1 ]
Corbu, C [1 ]
机构：
[1] ENSAIS, LAB MET CORROS & MAT, F-67000 STRASBOURG, FRANCE
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 380卷 / 1-2期
关键词：
D O I：
10.1016/S0168-9002(96)00342-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The formation and properties of the chemical complex which forms on the HgI2 surface during etching in KI have been investigated. The amount of complex, identified as [KHgI3,H2O], remaining on the surface has been determined as a function of the KI concentration, the time of etching in KI and the time of rinse in water. This complex has been found to be very unstable and strongly hygroscopic. Its resistivity after drying is about 10(5) times lower than that of bulk HgI2.
引用
收藏
页码：112 / 116
页数：5
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