CVD SYNTHESIS AND THE STRUCTURE OF VERTICALLY ALIGNED CNT ARRAYS

被引:3
|
作者
Semenova, O., I [1 ]
Fedina, L., I [1 ]
Gutakovskii, A. K. [1 ]
Sitnikov, S., V [1 ]
Kurus, N. N. [1 ]
Dudin, A. A. [2 ]
Pavlov, A. A. [2 ]
Sheglov, D., V [1 ]
机构
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk, Russia
[2] Russian Acad Sci, Inst Nanotechnol & Microelect, Moscow, Russia
关键词
carbon nanotubes; CVD process; CNT array; high-resolution transmission electron microscopy; scanning electron microscopy; Raman scattering; WALLED CARBON NANOTUBES; RAMAN-SPECTROSCOPY; GROWTH;
D O I
10.1134/S0022476622070095
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The structure and morphology of vertically aligned CNT (VACNT) arrays grown by CVD on Fe-Al2O3/Si(001) substrates are studied using scanning and high-resolution transmission electron microscopy (HRTEM) methods and Raman scattering. It is established that reproducible growth of continuous VACNT arrays is achieved only if the deposited Fe layer is at least 2 nm thick, while the particle size of the catalyst formed by annealing at 700 degrees C varies in a range of 2-10 nm and the array consists mainly of single- and double-walled CNTs with a diameter of 1-6 nm. The Raman spectrum is characterized by the presence of a radial breathing mode in the region 95-232 cm(-1) and an intense G mode that is split into peaks at 1594 cm(-1) and 1568 cm(-1) upon laser excitation at the wavelength lambda = 785 nm. According to the literature data, both modes indicate predominantly semiconductor nature of tubes in the array. The measured surface resistance of the VACNT array is 320 +/- 20 Omega/square.
引用
收藏
页码:1145 / 1152
页数:8
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