A 5 GHz CMOS Low Noise Amplifier with a 3.25 turn spiral inductor for IEEE802.16a

被引：0

作者：

Kalantari, Fatemeh ^{[1
]}

Masoumi, Nasser ^{[1
]}

Gholampour, Nafiseh ^{[1
]}

Saeidi, Roghayeh ^{[1
]}

机构：

[1] Univ Tehran, Fac Elect Engn, Tehran 14174, Iran

来源：

2006 IEEE WIRELESS COMMUNICATIONS AND NETWORKING CONFERENCE (WCNC 2006), VOLS 1-4 | 2006年

关键词：

Amplifier noise; induced gate noise; low noise amplifier; noise figure; random noise;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A 5.25-GHz low noise amplifier (LNA), has been proposed for use in a receiver architecture for IEEE802.16a WMAN. The targeted frequency band is the un-licensed band UN11 5 GHz. The amplifier has been simulated with two different spiral inductor models as L(d). In our spiral inductor model we have improved "the Greenhouse spiral inductor model", then we compare the results with the case when we use the spiral inductor model of the technology. The amplifier achieves voltage gain of 16.4, 19.4 dB with a noise figure of only 1.5,1.58 dB, the IIP(3) is 14,13.1-dBm and the reverse isolation is about - 10.7, -13.2 dB for our spiral inductor model and that of technology, respectively. Using a 0.18 mu m CMOS process, the LNA dissipates 7.2 mW from a 1.8V supply voltage in both cases. In this paper, we present an analysis of the LNA architecture.

引用

页码：2330 / 2334

页数：5

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