A 5 GHz CMOS Low Noise Amplifier with a 3.25 turn spiral inductor for IEEE802.16a

被引：0
|
作者：
Kalantari, Fatemeh [1 ]
Masoumi, Nasser [1 ]
Gholampour, Nafiseh [1 ]
Saeidi, Roghayeh [1 ]
机构：
[1] Univ Tehran, Fac Elect Engn, Tehran 14174, Iran
来源：
2006 IEEE WIRELESS COMMUNICATIONS AND NETWORKING CONFERENCE (WCNC 2006), VOLS 1-4 | 2006年
关键词：
Amplifier noise; induced gate noise; low noise amplifier; noise figure; random noise;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A 5.25-GHz low noise amplifier (LNA), has been proposed for use in a receiver architecture for IEEE802.16a WMAN. The targeted frequency band is the un-licensed band UN11 5 GHz. The amplifier has been simulated with two different spiral inductor models as L(d). In our spiral inductor model we have improved "the Greenhouse spiral inductor model", then we compare the results with the case when we use the spiral inductor model of the technology. The amplifier achieves voltage gain of 16.4, 19.4 dB with a noise figure of only 1.5,1.58 dB, the IIP(3) is 14,13.1-dBm and the reverse isolation is about - 10.7, -13.2 dB for our spiral inductor model and that of technology, respectively. Using a 0.18 mu m CMOS process, the LNA dissipates 7.2 mW from a 1.8V supply voltage in both cases. In this paper, we present an analysis of the LNA architecture.
引用
收藏
页码：2330 / 2334
页数：5
相关论文
共 50 条
  • [31] A CMOS low noise amplifier with integrated front-side micromachined inductor
    Ben Yishay, Roee
    Stolyarova, Sara
    Shapira, Shye
    Musiya, Moshe
    Kryger, David
    Shiloh, Yossi
    Nemirovsky, Yael
    MICROELECTRONICS JOURNAL, 2011, 42 (05) : 754 - 757
  • [32] Analysis and design of a CMOS low noise amplifier for 3-5 GHz UWB systems
    Hong Zhang
    Guican Chen
    2007 5TH INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2007, : 748 - +
  • [33] A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications
    张浩
    李智群
    王志功
    章丽
    李伟
    半导体学报, 2010, 31 (05) : 90 - 95
  • [34] Design and implementation of a 1–5 GHz UWB low noise amplifier in 0.18 μm CMOS
    Ming Shen
    Tian Tong
    Jan H. Mikkelsen
    Ole K. Jensen
    Torben Larsen
    Analog Integrated Circuits and Signal Processing, 2011, 67 : 41 - 48
  • [35] A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications
    Zhang Hao
    Li Zhiqun
    Wang Zhigong
    Zhang Li
    Li Wei
    JOURNAL OF SEMICONDUCTORS, 2010, 31 (05) : 0550051 - 0550056
  • [36] Design of low-power 24 GHz CMOS low noise amplifier
    Noh S.-H.
    Ryu J.-Y.
    Journal of Institute of Control, Robotics and Systems, 2021, 27 (11): : 919 - 924
  • [37] 2 GHz, 130 nm CMOS low noise amplifier for WCDMA
    Pienkowski, D
    Circa, R
    Boeck, G
    2005 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE (IMOC), 2005, : 105 - 109
  • [38] A 2.4 GHz CMOS image-reject low noise amplifier
    Sun, MC
    Shing, TC
    Shu, YH
    Feng, WS
    PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL I: ANALOG CIRCUITS AND SIGNAL PROCESSING, 2003, : 329 - 332
  • [39] Design of 1 GHz 0.5 μm CMOS low noise amplifier
    Yao, Fei
    Cheng, Buwen
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2004, 25 (10): : 1291 - 1295
  • [40] A 77 GHz CMOS Low Noise Amplifier for Automotive Radar Receiver
    Le, H. V.
    Duong, H. T.
    Ta, C. M.
    Huynh, A. T.
    Evans, R. J.
    Skafidas, E.
    PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2012, : 174 - 176
12345